HAT2016R datasheet(3/10 Pages) HITACHI

номер детали	HAT2016R

подробное описание детали	Silicon N Channel Power MOS FET High Speed Power Switching

PDF	10 Pages

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производитель	HITACHI [Hitachi Semiconductor]

домашняя страница	http://www.renesas.com/eng

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3 / 10 page

HAT2016R

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown

voltage

(BR)DSS

——V

D = 10mA, VGS = 0

Gate to source breakdown

voltage

(BR)GSS

±20

——V

G = ±100µA, VDS = 0

Gate to source leak current

GSS

——

±10

µAV

GS = ±16V, VDS = 0

Zero gate voltege drain current

DSS

——10

µAV

DS = 30 V, VGS = 0

Gate to source cutoff voltage

GS(off)

1.0

—

2.0

DS = 10V, I D = 1mA

Static drain to source on state

DS(on)

—

0.03

0.045

Ω

D = 4A, VGS = 10V

Note4

resistance

DS(on)

—

0.05

0.08

Ω

D = 4A, VGS = 4V

Note4

Forward transfer admittance

fs|

58—

D = 4A, VDS = 10V

Note4

Input capacitance

Ciss

—

560

—

DS = 10V

Output capacitance

Coss

—

380

—

GS = 0

Reverse transfer capacitance

Crss

—

170

—

f = 1MHz

Turn-on delay time

d(on)

—

GS = 4V, ID = 4A

Rise time

—

270

—

DD ≅ 10V

Turn-off delay time

d(off)

—40

—

Fall time

—65

—

Body–drain diode forward

voltage

—

0.9

1.4

IF = 6.5A, V

GS = 0

Note4

Body–drain diode reverse

recovery time

—

IF = 6.5A, V

GS = 0

diF/ dt =20A/

µs

Note:

4. Pulse test

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