LSP01 datasheet(2/2 Pages) ZHAOXINGWEI

номер детали	LSP01

подробное описание детали	P-Channel 2.5-V (G-S) MOSFET

PDF	2 Pages

Scroll/Zoom	100%

производитель	ZHAOXINGWEI [Zhaoxingwei Electronics ., Ltd]

домашняя страница	http://www.alldatasheet.com

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2 / 2 page

SMD Type

Transistors

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

V(BR)DSS VGS =0V, ID = -250 ìA

-20

Gate Threshold Voltage

VGS(th)

VDS =VGS,ID = -250 ìA

-0.45

-0.95

Gate-Body Leakage

IGSS

VDS =0V, VGS =

100

VDS =-20 V, VGS =0V

-1

VDS =-20 V, VGS =0V, TJ =55

-10

VDS

-5 V, VGS =-4.5V

-6

VDS

-5 V, VGS =-2.5V

-3

VGS =-4.5V, ID = -2.8 A

0.08

0.1

VGS =-2.5V, ID = -2.0 A

0.11

0.15

Forward Transconductance *

gfs

VDS =-5V, ID = -2.8 A

6.5

Diode Forward Voltage *

VSD

IS = -0.75 A, VGS = 0 V

-0.8

-1.2

Total Gate Charge

4.5

Gate-Source Charge

Qgs

0.7

Gate-Drain Charge

Qgd

1.1

Input Capacitance

Ciss

375

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

td(on)

td(off)

* Pulse test: PW

300 ìs duty cycle

2%.

Turn-Off Time

Turn-On Time

On-State Drain Current

ID(on)

Zero Gate Voltage Drain Current

IDSS

Drain-Source On-State Resistance *

rDS(on)

VDS =-6V ,VGS =-4.5V , ID=-2.8A

VDS =-6V ,VGS = 0 ,f= 1 MHz

VDD =-6V , RL =6Ù,

ID =-1A , VGEN =- 4.5V , RG =6Ù

LSP01

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