HAF2011(L),HAF2011(S)

3

Electrical Characteristics (Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain current

I

D1

(25)

—

—

A

V

Drain current

I

D2

—

—

10

mA

V

Drain to source breakdown

voltage

V

(BR)DSS

60

——V

I

Gate to source breakdown

voltage

V

(BR)GSS

(16)

—

—

V

I

Gate to source breakdown

voltage

V

(BR)GSS

(–2.5)

—

—

V

I

Gate to source leak current

I

GSS1

—

—

100

µAV

I

GSS2

——

50

µAV

I

GSS3

——

1

µAV

I

GSS4

—

—

–100

µAV

Input current (shut down)

I

GS(op)1

—

0.8

—

mA

V

I

GS(op)2

—

0.35

—

mA

V

Zero gate voltege drain

current

I

DSS

—

—

250

µAV

Gate to source cutoff voltage

V

GS(off)

1.0

—

2.25

V

I

Static drain to source on state

resistance

R

DS(on)

—2533m

Ω

I

Note3

Static drain to source on state

resistance

R

DS(on)

—1520m

Ω

I

Note3

Forward transfer admittance

|y

50

—

S

I

Note3

Output capacitance

Coss

—

940

—

pF

V

f = 1 MHz

Turn-on delay time

t

d(on)

—

(7.8)

—

µsI

Rise time

t

r

—

(64)

—

µsR

Turn-off delay time

t

d(off)

—

(19)

—

µs

Fall time

t

f

—

(30)

—

µs

Body–drain diode forward

voltage

V

DF

—

(0.85)

—

V

I

Body–drain diode reverse

recovery time

t

rr

—

(

)

—

ns

I

diF/ dt =50A/

µs

Over load shut down

t

os1

—

(

)

—

ms

V

operation time

Note4

t

os2

—

(

)

—

ms

V

Note:

3. Pulse test

4. Include the time shiff based on increasing of chennel temperature when operete under over load

condition.