2SC5148 datasheet(1/1 Pages) TGS

номер детали	2SC5148

подробное описание детали	Silicon NPN Triple Diffused Planar Ttransistors

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производитель	TGS [Tiger Electronic Co.,Ltd]

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Parameter

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

1200

V

Collector-Emitter Voltage

V

CEO

700

V

Emitter-Base Voltage

V

EBO

6.0

V

Collector Current

I

C

6.0

A

Base Current

I

B

3.0

A

Total Dissipation at

P

tot

50

W

Max. Operating Junction Temperature

T

j

150

oC

Storage Temperature

T

stg

-55~150

oC

2SC5148

Application:

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Collector Cut-off Current

I

CBO

V

CB = 1000V, IE = 0

—

5.0

uA

Emitter Cut-off Current

I

EBO

V

EB = 6.0V, IC

=0

—

5.0

uA

Collector-Emitter Sustaining Voltage

V

CEO

I

C = 2.0mA, IB = 0

700

—

V

DC Current Gain

h

FE(1)

V

CE = 5.0V, IC = 1.0A

10

—

30

h

FE(2)

V

CE = 5.0V, IC = 5.0A

5

—

Collector-Emitter Saturation Voltage

V

CE(sat)

I

C = 5.0A, IB = 1.2A

—

2.0

V

Base-Emitter Saturation Voltage

V

BE(sat)

I

C = 5.0A, IB = 1.2A

—

1.5

V

Current Gain Bandwidth Product

f

T

V

CE = 10V, IC = 0.1A

—

2.0

—

MHz

Silicon NPN Triple Diffused Planar Ttransistors

Product specification

Horizontal deflection output for high resolution

display ,color TV.

High speed switching applications

ELECTRICAL CHARACTERISTICS

ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C)

O

( Ta = 25 C)

O

TO-3P

（H)IS

TIGER ELECTRONIC CO.,LTD

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Toshiba Semiconductor	2SC5148	205Kb / 4P	NPN TRIPLE DIFFUSED MESA TYPE (DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS)
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Аналогичное описание - 2SC5148

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Hitachi Semiconductor	2SC5250	71Kb / 5P	Silicon NPN Triple Diffused Planar
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