IXTY1N80P datasheet(1/5 Pages) IXYS

номер детали	IXTY1N80P

подробное описание детали	N-Channel Enhancement Mode Avalanche Rated

PDF	5 Pages

Scroll/Zoom	100%

производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

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1 / 5 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

800

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

800

V

GSS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C = 25°C1

A

I

DM

T

C = 25°C, Pulse Width Limited by TJM

2A

I

A

T

C = 25°C1

A

E

AS

T

C = 25°C75

mJ

dV/dt

I

S

≤ I

DM, VDD ≤ VDSS, TJ ≤ 150°C

5

V/ns

P

D

T

C = 25°C42

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6mm (0.062) from Case for 10s

300

°C

T

SOLD

Plastic Body for 10s

260

°C

M

d

Mounting Torque

(TO-220)

1.13 / 10

Nm/lb.in.

Weight

TO-263

2.50

g

TO-220

3.00

g

TO-252

0.35

g

TO-251

0.40

g

DS100112(02/09)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 250μA

800

V

GS(th)

V

DS = VGS, ID = 50μA

2.0

4.0 V

I

GSS

V

GS = ±20V, VDS = 0V

±100 nA

I

DSS

V

DS = VDSS

3

μA

V

GS = 0V

T

J = 125°C

30

μA

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Note 1

10

14

Ω

PolarTM Power

MOSFET

N-Channel Enhancement Mode

Avalanche Rated

IXTA1N80P

IXTP1N80P

IXTU1N80P

IXTY1N80P

V

DSS

= 800V

I

D25

= 1A

R

DS(on) ≤

≤≤≤≤ 14Ω

Ω

Preliminary Technical Information

Features

International Standard Packages

Fast Intrinsic Rectifier

Avalanche Rated

Low Package Inductance

Advantages

Easy to Mount

Space Savings

High Power Density

Applications

Switched-Mode and Resonant-Mode

Power Supplies

DC-DC Converters

Laser Drivers

AC and DC Motor Drives

Robotics and Servo Controls

G = Gate

D

= Drain

S = Source

TAB = Drain

(TAB)

TO-252 (IXTY)

(TAB)

TO-251 (IXTU)

S

D

G

S

G

TO-220 (IXTP)

TO-263 (IXTA)

(TAB)

G

S

(TAB)

D

G

S

Аналогичный номер детали - IXTY1N80P

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