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IXTH102N20T датащи(PDF) 2 Page - IXYS Corporation

номер детали IXTH102N20T
подробное описание детали  TrenchHV Power MOSFET
PDF  5 Pages
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производитель  IXYS [IXYS Corporation]
домашняя страница  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXTH102N20T датащи(HTML) 2 Page - IXYS Corporation

  IXTH102N20T Datasheet HTML 1Page - IXYS Corporation IXTH102N20T Datasheet HTML 2Page - IXYS Corporation IXTH102N20T Datasheet HTML 3Page - IXYS Corporation IXTH102N20T Datasheet HTML 4Page - IXYS Corporation IXTH102N20T Datasheet HTML 5Page - IXYS Corporation  
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IXYS reserves the right to change limits, test conditions, and dimensions.
IXTH102N20T IXTQ102N20T IXTV102N20T
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS= 10 V; ID = 0.5 ID25, Note 1
55
92
S
C
iss
6800
pF
C
oss
V
GS = 0 V, VDS = 25 V, f = 1 MHz
722
pF
C
rss
126
pF
t
d(on)
Resistive Switching Times
19
ns
t
r
V
GS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
26
ns
t
d(off)
R
G = 2.5 Ω (External)
50
ns
t
f
25
ns
Q
g(on)
114
nC
Q
gs
V
GS= 10 V, VDS = 0.5 VDSS, ID = 25 A
34
nC
Q
gd
31
nC
R
thJC
0.20 °C/W
R
thCS
0.25
°C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
T
J = 25°C unless otherwise specified)
Min.
Typ.
Max.
I
S
V
GS = 0 V
102
A
I
SM
Pulse width limited by T
JM
330
A
V
SD
I
F = 50 A, VGS = 0 V, Note 1
1.2
V
t
rr
I
F = 50 A, -di/dt = 100 A/μs
130
ns
V
R = 50 V, VGS = 0 V
Notes: 1. Pulse test, t
≤ 300 ms, duty cycle, d ≤ 2 %;
2. On through-hole packages, R
DS(on)
Kelvin test contact
location must be 5 mm or less from the package body.
TO-3P (IXTQ) Outline
Pins:
1 - Gate
2 - Drain
3 - Source
4, TAB - Drain
TO-247AD Outline
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205 0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
ÆP
3.55
3.65
.140
.144
Q
5.89
6.40
0.232 0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
Terminals: 1 - Gate
2 - Drain
3 - Source
Tab - Drain
1
2
3
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered
are derived from data gathered during objective characterizations of preliminary engineer-
ing lots; but also may yet contain some information supplied during a pre-production
design evaluation. IXYS reserves the right to change limits, test conditions, and dimen-
sions without notice.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2
7,157,338B2
by one or moreof the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2
6,759,692
7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
PLUS220 (IXTV) Outline



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