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IXTH102N20T датащи(PDF) 2 Page - IXYS Corporation |
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IXTH102N20T датащи(HTML) 2 Page - IXYS Corporation |
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2 / 5 page ![]() IXYS reserves the right to change limits, test conditions, and dimensions. IXTH102N20T IXTQ102N20T IXTV102N20T Symbol Test Conditions Characteristic Values (T J = 25°C unless otherwise specified) Min. Typ. Max. g fs V DS= 10 V; ID = 0.5 ID25, Note 1 55 92 S C iss 6800 pF C oss V GS = 0 V, VDS = 25 V, f = 1 MHz 722 pF C rss 126 pF t d(on) Resistive Switching Times 19 ns t r V GS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 26 ns t d(off) R G = 2.5 Ω (External) 50 ns t f 25 ns Q g(on) 114 nC Q gs V GS= 10 V, VDS = 0.5 VDSS, ID = 25 A 34 nC Q gd 31 nC R thJC 0.20 °C/W R thCS 0.25 °C/W Source-Drain Diode Symbol Test Conditions Characteristic Values T J = 25°C unless otherwise specified) Min. Typ. Max. I S V GS = 0 V 102 A I SM Pulse width limited by T JM 330 A V SD I F = 50 A, VGS = 0 V, Note 1 1.2 V t rr I F = 50 A, -di/dt = 100 A/μs 130 ns V R = 50 V, VGS = 0 V Notes: 1. Pulse test, t ≤ 300 ms, duty cycle, d ≤ 2 %; 2. On through-hole packages, R DS(on) Kelvin test contact location must be 5 mm or less from the package body. TO-3P (IXTQ) Outline Pins: 1 - Gate 2 - Drain 3 - Source 4, TAB - Drain TO-247AD Outline Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 1 2.2 2.54 .087 .102 A 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 ÆP 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain 1 2 3 PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineer- ing lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimen- sions without notice. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 PLUS220 (IXTV) Outline |
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