STP601 / STP601D

P Channel Enhancement Mode MOSFET

-

30A

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

Copyright © 2009, Stanson Corp.

STP601 / STP601D 2010. V1

ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted)

Parameter

Symbo

l

Typical

Unit

Drain-Source Voltage

VDSS

-60

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current

(TJ=150℃)

TA=25℃

TA=100℃

ID

-30.0

-22.0

A

Pulsed Drain Current

IDM

-110

A

Continuous Source Current (Diode Conduction)

IS

-30

A

Power Dissipation

TA=25℃

PD

60

W

Operation Junction Temperature

TJ

150

℃

Storage Temperature Range

TSTG

-55/150

℃

Thermal Resistance-Junction to Ambient

RθJA

25

℃/W