STC4606 datasheet(3/8 Pages) STANSON

3 / 8 page

STC4606

N&P Pair Enhancement Mode MOSFET

6.5A / -6.9A

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

STC4606 2008. V1

ELECTRICAL CHARACTERISTICS

( Ta = 25℃ Unless otherwise noted )

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Static

Drain-Source Breakdown

Voltage

V(BR)DSS

VGS=0V,ID=250uA

VGS=0V,ID=-250uA

-30

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250 uA

VDS=VGS,ID=-250uA

0.8

-1.0

1.8

-2.0

Gate Leakage Current

IGSS

VDS=0V,VGS=±20V

±100

VDS=24V,VGS=0V

VDS=-24V,VGS=0V

-1

Zero Gate Voltage Drain

Current

IDSS

TJ=55℃

VDS=24V,VGS=0V

VDS=-24V,VGS=0V

-5

On-State Drain Current

ID(on)

VDS≧5V,VGS=10V

VDS≦-5V,VGS=-10V

-30

VGS=10V, ID=6.9A

VGS=-10V,ID=-6.0A

0.030

0.041

0.040

0.056

Drain-source On-Resistance

RDS(on)

VGS=4.5V, ID=5.0A

VGS=-4.5V,ID=-5.0 A

0.046

0.060

0.055

0.072

Forward Tran Conductance

gfs

VDS=5V,ID=6.9A

VDS=-15V,ID=-5.9A

Diode Forward Voltage

VSD

IS=1.0A,VGS=0V

IS=-1.7A,VGS=0V

0.7

-0.7.

1.0

-1.0

Dynamic

Total Gate Charge

13.8

18.5

16.6

22.2

Gate-Source Charge

Qgs

1.8

2.7

Gate-Drain Charge

Qgd

N-Channel

VDS=15V,VGS=10V

ID≡6.9A

P-Channel

VDS=-15V,VGS=-10V

ID≡5.0A

2.0

4.5

4.6

7.7

11.5

Turn-On Time

td(on)

4.1

5.7

8.5

20.6

20.2

Turn-Off Time

td(off)

N-Channel

VDS=10V,RL=2.2Ω

ID=1A,VGEN=10V

RG=3Ω

P-Channel

VDS=-10V,RL=2.7Ω

ID=-1A,VGEN=-3V

RG=2.7Ω

5.2

9.5

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