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FMMT619TC датащи(PDF) 4 Page - Diodes Incorporated

номер детали FMMT619TC
подробное описание детали  50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23
PDF  7 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

FMMT619TC датащи(HTML) 4 Page - Diodes Incorporated

  FMMT619TC Datasheet HTML 1Page - Diodes Incorporated FMMT619TC Datasheet HTML 2Page - Diodes Incorporated FMMT619TC Datasheet HTML 3Page - Diodes Incorporated FMMT619TC Datasheet HTML 4Page - Diodes Incorporated FMMT619TC Datasheet HTML 5Page - Diodes Incorporated FMMT619TC Datasheet HTML 6Page - Diodes Incorporated FMMT619TC Datasheet HTML 7Page - Diodes Incorporated  
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FMMT619
Document number: DS33236 Rev. 8 - 2
4 of 7
www.diodes.com
October 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
FMMT619
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BVCBO
50
190
-
V
IC = 100µA
Collector-Emitter Breakdown Voltage (Note 9)
BVCEO
50
65
-
V
IC = 10mA
Emitter-Base Breakdown Voltage
BVEBO
7
8.3
-
V
IE = 100µA
Collector Cut-off Current
ICBO
-
-
100
nA
VCB = 40V
Emitter Cut-off Current
IEBO
-
-
100
nA
VEB = 6V
Collector Emitter Cut-off Current
ICES
-
-
100
nA
VCES = 40V
ON CHARACTERISTICS (Note 9)
Static Forward Current Transfer Ratio
hFE
200
300
200
100
-
400
450
400
225
40
-
-
-
-
-
-
IC = 10mA, VCE = 2V
IC = 200mA, VCE = 2V
IC = 1A, VCE = 2V
IC = 2A, VCE = 2V
IC = 6A, VCE = 2V
Collector-Emitter Saturation Voltage
VCE(sat)
-
-
-
10
125
150
20
200
220
mV
IC = 0.1A, IB = 10mA
IC = 1A, IB = 10mA
IC = 2A, IB = 50mA
Base-Emitter Saturation Voltage
VBE(sat)
-
0.87
1.0
V
IC = 2A, IB = 50mA
Base-Emitter Saturation Voltage
VBE(on)
-
0.82
1.0
V
IC = 2A, VCE = 2V
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
fT
100
165
-
MHz
IC = 50mA, VCE = 10V,
f = 100MHz
Collector Output Capacitance
Cobo
-
12
20
pF
VCB = 10V, f = 1MHz
Turn-On Time
t(on)
-
170
-
ns
VCC = 10V, IC = 1A,
IB1 = -IB2 = 10mA
Turn-Off Time
t(off)
-
750
-
ns
Notes:
9. Measured under pulsed conditions. Pulse width
≤ 300µs. Duty cycle ≤ 2%



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