SENSITRON

SEMICONDUCTOR

2013 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729-4681

PHONE (631) 586-7600

 FAX (631) 242-9798  www.sensitron.com  sales@sensitron.com

SRADM1007

TECHNICAL DATA

DATA SHEET 5405, REV. -

HERMETIC RAD HARD POWER MOSFET

FEATURES:

 Low RDS(on)

 Single Event Effect (SEE) hardened,

o

LET 55, Range: 90

μm



VGS = -20V, VDS = 100V

 Total Ionization Dose (TID) hardened, 100kRad

 Surface mount SMD-0.5 package

 Near equivalent to IRHNJ7130

MAXIMUM RATINGS

ALL RATINGS ARE AT T

C

= 25

C UNLESS OTHERWISE SPECIFIED.

RATING

SYMBOL

MIN.

TYP.

MAX.

UNITS

DRAIN TO SOURCE VOLTAGE

-

-

100

Volts

GATE TO SOURCE VOLTAGE

-

-

20

Volts

ON-STATE DRAIN CURRENT (Tc = 25

-

-

12.4

Amps

ON-STATE DRAIN CURRENT (Tc = 100

-

-

8

Amps

-

-

50

Amps

OPERATING AND STORAGE TEMPERATURE

-55

-

+150

C

TOTAL DEVICE DISSIPATION

-

-

75

Watts

THERMAL RESISTANCE, JUNCTION TO CASE

-

-

1.66

C/W

-

60

-

mJ

ELECTRICAL CHARACTERISTICS

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

UNITS

DRAIN SOURCE BREAKDOWN

100

-

-

Volts

STATIC DRAIN TO SOURCE ON STATE RESISTANCE

-

-

0.13



GATE THRESHOLD VOLTAGE

2.0

-

4.0

Volts

ZERO GATE VOLTAGE DRAIN CURRENT

-

-

25

A

GATE TO SOURCE LEAKAGE REVERSE

-

-

-

-

100

-100

nA

TURN ON DELAY TIME

RISE TIME

TURN OFF DELAY TIME

FALL TIME

-

-

-

-

-

-

-

-

25

25

35

20

nsec

DIODE FORWARD VOLTAGE

-

-

1.2

Volts

REVERSE RECOVERY TIME

-

-

400

nsec

INPUT CAPACITANCE

OUTPUT CAPACITANCE

REVERSE TRANSFER CAPACITANCE f = 1.0MHz

-

-

-

1600

120

3

-

-

-

pF

TOTAL GATE CHARGE

-

-

42

nC

**NOTE: This product is subject to the International Traffic in Arms Regulations (ITAR), 22 C.F.R. Parts 120 - 130, and

may not be exported without the appropriate U.S. Department of State authorization.