Data Sheet DS00109 / June 2010

Process information and data (“Information”) in this document is an outline only , for general information purposes ; it does not constitute a representation or warranty

as to capability , performance or suitability of the Process for any given application. User must satisfy himself that the Process is suitable for his requirements .

While Information herein is believed correct and accurate , it is subject to change without notice and Plessey accepts no liability arising from the use or application of

such Information.

All use of , and product manufactured and supplied using the Process , will be subject to Plessey’s standard trading terms, which are available on request .

Plessey Semiconductors Ltd. Tamerton Road, Roborough, Plymouth, United Kingdom, PL6 7BQ

Tel: +44 1752 693000

Fax: +44 1752 693200

WPC

Bipolar Process

Data Sheet DS00109 / June 2010

Key parameters (minimum geometry device)

NPN

fT

7 GHz at Ic=0.4 mA, Vce=2V

CJC

10 fF

CJE

14fF

Bvceo

6V

Propagation

Delay

125 ps

Applications

•

Low current circuits

•

Synthesizers

•

Pagers

Key Process Feature

•

1.8nF/sq

μm MIS capacitors

•

High value polysilicon resistor

•

Very low leakage currents

•

Low flicker noise

npn cross section

Epitaxy (n-)

BN

Substrate (p-)

DC

Collector

LOCOS

BP

IS

LOCOS

Base

Emitter

IS

BP

Minimum geometry npn fT curve

0.0

2.0

4.0

6.0

8.0

1.E-06

1.E-05

1.E-04

1.E-03

1.E-02

IC (A)

fT (GHz)

Vce=2V

npn parameters (1.5 x 1.5 um emitter)

parameter

Condition

Value

Units

fT

Ic=0.3mA Vce=2V

7

GHz

HFE

Ic=10

μA Vce=2V

100

VAF

30

V

BVCEO

Ic=1

μA

>13.5

V

BVCBO

Ic=5

μA

>6

V

CJE

Vbe=0

14

fF

CJC

Vbc=0

10

fF

CJS

Vcs=0

17

fF

Lateral pnp parameters

parameter

Condition

Value

Units

fT

Vce=2V

100

MHz

HFE

Ic=10

μA Vcb=0V

60

VAF

17

V

BVCEO

Ic=1

μA

>6

V

Resistor Values

parameter

Value

Units

Poly

3.2

± 0.5

k

Ω

Base

550

± 50

Ω

PR

67.5

± 7.5

Ω

Design Rules

Feature

Min

μm

Spacing

μm

Emitter

1.0 x 2.5

or

1.5 x 1.5

Poly (EP) resistor

1.5

2.0

Base and PR

resistor

3.0

1.5

Contact

1.0 x 2.5

or

1.5 x 1.5

1st Layer metal

2.0

2.0

2

2.0

2.0

WPC is a versatile RF bipolar process providing excellent RF functionality

at low cost. Features such as high value poly resistors, nitride capacitors

and two layer metal allow low current circuits to be built with high packing

densities,