Data Sheet DS00105 / June 2010

Process information and data (“Information”) in this document is an outline only , for general information purposes ; it does not constitute a representation or warranty

as to capability , performance or suitability of the Process for any given application. User must satisfy himself that the Process is suitable for his requirements .

While Information herein is believed correct and accurate , it is subject to change without notice and Plessey accepts no liability arising from the use or application of

such Information.

All use of , and product manufactured and supplied using the Process , will be subject to Plessey’s standard trading terms, which are available on request .

Plessey Semiconductors Ltd. Tamerton Road, Roborough, Plymouth, United Kingdom, PL6 7BQ

Tel: +44 1752 693000

Fax: +44 1752 693200

HJB

Complementary Bipolar Process

Data Sheet DS00105 / June 2010

HJB is a double polysilicon trench isolated complementary bipolar process

for RF applications in the range 900MHz to 2.4GHz.

Key parameters (minimum geometry device)

NPN

PNP

fT

19 GHz

15GHz

CJC

3.5 fF

4 fF

CJE

5.5fF

4.5fF

Bvceo

> 4.5V

>4.5V

Applications

•

High Speed amplifiers

•

TV Tuners

•

Frequency Scalers

•

High Speed Logic

Key Process Feature

•

Integrated inductors (optional)

•

Varactor diodes - 0.5 fF/μm²

•

Polysilicon resistors - 110/155/1400 Ohms/sq

•

•

MIM capacitors - 0.5 fF/μm² (optional)

•

MIS capacitors - 2.75 fF/μm²

•

Two level or three level metal option

npn cross section

oxide

epitaxy (n-)

Oxide

BN

Substrate (p-)

DC

Base

CS

CS

P+

Emitter

Collector

P+

base

vpnp cross section

oxide

Oxide

Oxide

Substrate (p-)

Oxide

Oxide

BSUB

Oxide

pwell

DC

BP

Collector

CS

N+

N+

Base

CS

Well

Emitter

Base

npn parameters (0.6 x 4.0um emitter)

parameter

Condition

Value

Units

fT

Ic=0.7mA Vce=2V

19

GHz

HFE

Ic=10

μA Vce=2V

174

VAF

63

V

BVCEO

Ic=1

μA

>4.5

V

BVCBO

Ic=1

μA

>8.0

V

CJE

Vbe=0

14

fF

CJC

Vbc=0

7.5

fF

CJS

Vcs=0

19

fF

Vertical pnp parameters (0.6 X 4.0

μm emitter)

parameter

Condition

Value

Units

fT

Ic=0.2mA Vce=2V

15

GHz

HFE

Ic=1

μA Vcb=0

70

VAF

19

V

BVCEO

Ic=1

μA

>12

V

BVCBO

Ic=1

μA

>8.0

V

CJE

Vbe=0

11

fF

CJC

Vbc=0

10

fF

CJS*

Vcs=0

29

fF

*pnp collector-isolation junction

Polysilicon Resistor Values

parameter

Value

Units

LoP

155

± 20

Ω

LoN

110

± 20

Ω

HiP

1.4

± 0.2

k

Ω

Design Rules

Feature

Min

μm

Spacing

μm

Emitter

0.6 X 1.6

LoP, LoN resistor

1.2

0.8

Contact

1.0 X 1.6

1.4

1st Layer metal

1.4

1.0

2

1.4

1.0

3

3.0

2.0