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2SC4913 датащи(PDF) 2 Page - Hitachi Semiconductor

номер детали 2SC4913
подробное описание детали  Silicon NPN Triple Diffused
PDF  6 Pages
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производитель  HITACHI [Hitachi Semiconductor]
домашняя страница  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SC4913 датащи(HTML) 2 Page - Hitachi Semiconductor

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2SC4913
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
2000
V
Collector to emitter voltage
V
CEO
2000
V
Emitter to base voltage
V
EBO
6V
Collector current
I
C
20
mA
Collector peak current
I
C(peak)
40
mA
Collector power dissipation
P
C
1.5
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector cutoff current
I
CES
—
—
500
µAV
CE = 2000 V, RBE = 0
Collector cutoff current
I
CEO
——
5
mA
V
CE = 2000 V, RBE = ∞
Emitter cutoff current
I
EBO
—
—
500
µAV
EB = 6 V, IC = 0
DC current transfer ratio
h
FE
10
—
—
V
CE = 5 V, IC = 1 mA
Collector to emitter saturation
voltage
V
CE(sat)
—
—
5.0
V
I
C = 10 mA, IB = 2 mA
2.0
1.5
1.0
0.5
0
Ambient Temperature Ta (
°C)
Maximum Collector Power Dissipation Curve
50
100
150
200
100
50
20
10
0.5
0.2
0.1
100
200
500
1000 2000
5000
Collector to Emitter Voltage V
(V)
Area of Safe Operation
CE
1 shot pulse
ic(peak)
I max
C
Ta = 25
°C



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