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2SC4702 датащи(PDF) 2 Page - Hitachi Semiconductor

номер детали 2SC4702
подробное описание детали  Silicon NPN Epitaxial
PDF  6 Pages
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производитель  HITACHI [Hitachi Semiconductor]
домашняя страница  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SC4702 датащи(HTML) 2 Page - Hitachi Semiconductor

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2SC4702
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
300
V
Collector to emitter voltage
V
CEO
300
V
Emitter to base voltage
V
EBO
5V
Collector current
I
C
50
mA
Collector power dissipation
P
C
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
300
—
—
V
I
C = 10 µA, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
300
—
—
V
I
C = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
5
——V
I
E = 10 µA, IC = 0
Collector cutoff current
I
CBO
—
—
0.1
µAV
CB = 250 V, IE = 0
Collector to emitter saturation
voltage
V
CE(sat)
—
—
0.5
V
I
C = 30 mA, IB = 3 mA
DC current transfer ratio
h
FE
60
—
150
V
CE = 6 V, IC = 2 mA
Gain bandwidth product
f
T
—
80
—
MHz
V
CE = 6 V, IC = 5 mA
Collector output capacitance
Cob
—
1.5
—
pF
V
CB = 10 V, IE = 0, f = 1 MHz
Note:
Marking is “XV–”.



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