2SC458 datasheet(2/9 Pages) HITACHI

2 / 9 page

2SC458 (K)

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

CBO

Collector to emitter voltage

CEO

Emitter to base voltage

EBO

Collector current

100

Emitter current

–100

Collector power dissipation

200

Junction temperature

150

°C

Storage temperature

Tstg

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

voltage

(BR)CBO

—

C = 10 µA, IE = 0

Collector to emitter breakdown

voltage

(BR)CEO

—

C = 1 mA, RBE = ∞

Emitter to base breakdown

voltage

(BR)EBO

5—

—

E = 10 µA, IC = 0

Collector cutoff current

CBO

—

0.5

µAV

CB = 18 V, IE = 0

Emitter cutoff current

EBO

—

1.0

µAV

EB = 4 V, IC = 0

DC current transfer ratio

FE*

100

—

500

CE = 1 V, IC = 10 mA

Collector to emitter saturation

voltage

CE(sat)

—

0.4

C = 10 mA, IB = 1 mA

Base to emitter voltage

BE(sat)

—

1.0

C = 10 mA, IB = 1 mA

Gain bandwidth product

100

—

MHz

CE = 10 V, IC = 10 mA

Collector output capacitance

Cob

—

CB = 10 V, IE = 0, f = 1 MHz

Turn on time

—

C = 10 IB1 = –10 IB2 = 10 mA,

CC = 10 V

Turn off time

off

—

300

—

Storage time

stg

—

260

—

C = IB1 = –IB2 = 20 mA,

CC = 5 V

Note:

1. The 2SC458 (K) is grouped by h

FE as follows.

100 to 200

160 to 320

250 to 500

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