2SC454 datasheet(2/8 Pages) HITACHI

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2SC454

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

CBO

Collector to emitter voltage

CEO

Emitter to base voltage

EBO

Collector current

100

Collector power dissipation

200

Junction temperature

150

°C

Storage temperature

Tstg

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

voltage

(BR)CBO

—

C = 10 µA, IE = 0

Collector to emitter breakdown

voltage

(BR)CEO

—

C = 1 mA, RBE = ∞

Emitter to base breakdown

voltage

(BR)EBO

5—

—

E = 10 µA, IC = 0

Collector cutoff current

CBO

—

0.5

µAV

CB = 18 V, IE = 0

Emitter cutoff current

EBO

—

0.5

µAV

EB = 2 V, IC = 0

DC current transfer ratio

FE*

100

—

500

CE = 12 V, IC = 2 mA

Base to emitter voltage

—

0.63

0.75

CE = 12 V, IC = 2 mA

Collector to emitter saturation

voltage

CE(sat)

—

0.2

C = 10 mA, IB = 1 mA

Gain bandwidth product

—

230

—

MHz

CE = 12 V, IC = 2 mA

Collector output capacitance

Cob

—

3.5

CB = 10 V, IE = 0, f = 1 MHz

Noise figure

—

CE = 6 V, IC = 0.1 mA,

f = 1 kHz, R

g = 500 Ω

IF power gain

IFG

—

CE = 12 V, IC = 1 mA,

f = 455 kHz, Rg = 1.5 k

Ω,

L = 40 kΩ

Note:

1. The 2SC454 is grouped by h

FE as follows.

100 to 200

160 to 320

250 to 500

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