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2SC4500S датащи(PDF) 2 Page - Hitachi Semiconductor

номер детали 2SC4500S
подробное описание детали  Silicon NPN Epitaxial
PDF  6 Pages
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производитель  HITACHI [Hitachi Semiconductor]
домашняя страница  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SC4500S датащи(HTML) 2 Page - Hitachi Semiconductor

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2SC4500(L)/(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
60
V
Collector to emitter voltage
V
CEO
60
V
Emitter to base voltage
V
EBO
7V
Collector current
I
C
1A
Collector peak current
I
C (peak)
2A
Collector power dissipation
P
C
0.8
W
P
C*
1
8
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at T
C = 25°C.
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
60
—
—
V
I
C = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
7—
—
V
I
E = 0.1 mA, IC = 0
Collector cutoff current
I
CBO
——
10
µAV
CB = 60 V, IE = 0
DC current transfer ratio
h
FE
2000
—
—
V
CE = 10 V, IC = 500 mA*
1
Collector to emitter saturation
voltage
V
CE (sat)
—
—
1.5
V
I
C = 500 mA, IB = 0.5 mA*
1
Base to emitter saturation
voltage
V
BE (sat)
—
—
2.0
V
I
C = 500 mA, IB = 0.5 mA*
1
Turn on time
t
on
—
100
—
ns
V
CC = 12 V, IC = 250 mA,
Turn off time
t
off
—
600
—
ns
I
B1 = –IB2 = 5 mA
Note:
1. Pulse Test.



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