2SC1775 datasheet(2/7 Pages) HITACHI

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2SC1775, 2SC1775A

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

2SC1775

2SC1775A

Unit

Collector to base voltage

CBO

120

Collector to emitter voltage

CEO

120

Emitter to base voltage

EBO

55V

Collector current

Collector power dissipation

300

Junction temperature

150

°C

Storage temperature

Tstg

–55 to +150

–50 to +150

°C

Electrical Characteristics (Ta = 25°C)

2SC1775

2SC1775A

Item

Symbol

Min

Typ

Max

Min

Typ

Max

Unit

Test conditions

Collector to emitter

breakdown voltage

(BR)CEO

—

120

—

C = 1 mA, RBE = ∞

Collector cutoff current

CBO

—

0.5

—

µAV

CB = 75 V, IE = 0

——

—

0.5

µAV

CB = 100 V, IE = 0

DC current transfer ratio h

FE1*

400

—

1200 400

—

1200

CE = 12 V, IC = 2 mA

FE2

160

—

160

—

CE = 12 V,

C = 0.1 mA

Base to emitter voltage

—

0.75

—

0.75

CE = 12 V, IC = 2 mA

Collector to emitter

saturation voltage

CE(sat)

—

0.5

—

0.5

C = 10 mA, IB = 1 mA

Gain bandwidth product f

—

200

—

200

—

MHz

CE = 12 V, IC = 2 mA

Collector output

capacitance

Cob

—

1.6

—

1.6

—

CB = 25 V, IE = 0,

f = 1 MHz

Noise figure

—

5.0

—

5.0

CE = 6 V,

C = 50 µA,

g = 50 kΩ

f = 10

—

1.5

—

1.5

f = 1

kHz

Note:

1. The 2SC1775/A is grouped by h

FE1 as follows.

400 to 800

600 to 1200

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