2SC1472K datasheet(3/8 Pages) HITACHI

номер детали	2SC1472K

подробное описание детали	Silicon NPN Epitaxial, Darlington

PDF	8 Pages

Scroll/Zoom	100%

производитель	HITACHI [Hitachi Semiconductor]

домашняя страница	http://www.renesas.com/eng

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3 / 8 page

2SC1472 (K)

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to emitter breakdown

voltage

(BR)CEO

—

C = 1 mA, RBE = ∞

Collector cutoff current

CBO

—

100

CB = 30 V, IE = 0

Emitter cutoff current

EBO

—

100

EB = 10 V, IC = 0

DC current transfer ratio

FE1*

2000

—

100000

C = 10 mA, VCE = 5 V

FE2*

3000

—

C = 100 mA, VCE =

5 V

(Pulse Test)

FE3*

3000

—

C = 400 mA, VCE =

5 V

(Pulse Test)

Collector to emitter saturation

voltage

CE(sat)

—

1.5

C = 100 mA, IB = 0.1 mA

Base to emitter voltage

BE(sat)

—

2.0

C = 100 mA, IB = 0.1 mA

Gain bandwidth product

—

MHz

CE = 5 V, IC = 10 mA

Collector output capacitance

Cob

—

CB = 10 V, IE = 0, f = 1 MHz

Turn on time

—

CC = 11 V

C = 100 IB1 = 100 mA

B2 = –IB1

Turn off time

off

—

800

—

Storage time

stg

—

350

—

Note:

1. The 2SC1472(K) is grouped by h

FE as follows.

FE1

2000 to 100000 5000 to 100000

FE2

3000 min

10000 min

FE3

3000 min

10000 min

Switching Time Test Circuit

0.002

–6 V

6 k

100

11 V

6 k

D.U.T.

CRT

P.G.

tr, tf

≤ 15 ns

≥ 10 µs

duty ratio

≤ 10%

–

0.002

–

Unit R :

Ω

C :

µF

13 V

10%

Response Waveform

90%

ton

toff

tstg

Input

Output

90%

10%

90%

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