WIDE DYNAMIC RANGE MICROCHANNEL PLATES F6584 SERIES

HAMAMATSU PHOTONICS K.K., Electron Tube Center

314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218

Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658

France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10

United Kingdom: Hamamatsu Photonics UK Limited: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: (44)181-367-3560, Fax: (44)181-367-6384

North Europe: Hamamatsu Photonics Norden AB: Färögatan 7, S-164-40 Kista, Sweden, Telephone: (46)8-703-29-50, Fax: (46)8-750-58-95

Italy: Hamamatsu Photonics Italia S.R.L.: Via Della Moia, 1/E 20020 Arese, (Milano), Italy, Telephone: (39)2-935 81 733, Fax: (39)2-935 81 741

TMCP1012E04

MAR. 1998. SI (9603)

Printed in Japan (500)

150

100

50

0

OUTPUT CURRENT [A]

STANDARD MCP

R=550 M

Ω

WIDE DYNAMIC RANGE MCP

R=10.8 M

Ω

OUTPUT CHARGE (C/s)

F6584 WIDE DYNAMIC RANGE MCP

RESISTANCE : 22.4 M

Ω/ 2 STAGE MCP

GAIN : 8

STANDARD MCP

RESISTANCE :

400 M

Ω/ 2 STAGE MCP

GAIN : 5

Figure 2: MCP Saturation Characteristics (D.C. MODE)

Figure 3: MCP Saturation Characteristics

(COUNTING MODE)

Figure 4: MCP Dimensional Outline (Unit : mm)

INDICATOR*

T

θ

INPUT SIDE

EFFECTIVE

AREA

ELECTRODE

*This indicator shows the MCP input side and the direction of channel bias.

T

0.48

F6584-01

0.43

F6584-09

θ : Bias Angle

PRECAUTIONS FOR USE

q Avoid touching the MCP or MCP assem-

bly with bare hands.

q Handle the MCP only in a clean room

since dust and humidity may adversely

affect MCP characteristics.

q The MCP should be operated in vacuum

q The MCP should be kept in vacuum or dry

nitrogen gas atmosphere during long

periods of storage.

q When outgassing from the MCP occurs,

baking the MCP at 400°C maximum in a

vacuum system is recommended. In ad-

dition electron bombarding may be effec-

tive.

TMCPB0041EB

TMCPB0042EC

TMCPA0030EB