PIN photodiode amplifier

C4890

HAMAMATSU PHOTONICS K.K., Solid State Division

1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218

Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658

France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10

United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777

North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01

Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741

Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.

Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K.

Cat. No. KACC1055E01

Apr. 2001 DN

0

0.5

1.0

1.5

0

10

20

30

2.0

s Gain vs. frequency

+12

+12

10 k

0.1 µ

R1

R3

R2

SMA

SMA

Vout

C4890

ATTENUATOR

PHOTODIODE

Damp quantity

(dB)

Resistance value according to the attenuator damp quantity

Damp rate

(%)

R1, R2

(

Ω)

R3

(

Ω)

00

0

50

3

30

8.2

150

650

16

68

10

70

27

36

KACCB0038EA

30

20

40

7

7

(2 ×) SMA JACK

WIDEBAND AMPLIFIER

C4890

No.

Vcc=12V

GND

(4 ×) M3 (d-5)

s Application example: High-speed O/E converter module

A high-sensitivity O/E converter can be easily configured by

using C4890 in conjunction with a high-speed PIN photodiode

(S5973, etc). The following is an example when C4890 is used

with S5973 to amplify the output signal after receiving an

attenuator. Major performance items are shown below.

Effective bandwidth: 5 MHz to 1.5 GHz

The lower limit is determined by the amplifier (C4890)

and the upper limit by the photodiode.

Conversion sensitivity (V/W) = 0.5 A/W × 50 × (100 -

α)/100 × 10 (λ=850 nm)

Detection limit: 4.4 µWrms (

λ=850 nm, BW=1.5 GHz)

Depends on the amplifier NF (NF=8 dB Typ.).

The above specifications are typical values and not guaranteed.

C4890 gain

Attenuator damp rate

Attenuator input impedance

Photodiode photoelectric sensitivity

0

0.5

1.0

1.5

0

1

2

2.0

s Group delay time vs. frequency

KACCB0039EA

s Dimensional outline (unit: mm)

KACCA0034EA

s Connection example

KPINC0003EB