GL359 datasheet(1/2 Pages) ETL

номер детали	GL359

подробное описание детали	P N P S I L I CO N P L A N A R H I G H C U R R E N T T R A N S I S T O R

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производитель	ETL [E-Tech Electronics LTD]

домашняя страница	http://e-tech.com.hk

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CORPORATION

GL359

Page: 1/2

ISSUED DATE :2005/10/27

REVISED DATE :2005/12/09B

GL359

P N P S I L I C O N P L A N A R H I G H C U R R E N T T R A N S I S T O R

Description

The GL359 is designed for general purpose switching and amplifier applications.

Features

&5 Amps continuous current, up to 10Amps peak current

&Excellent gain characteristic specified up to 10Amps

&Very low saturation voltages

Package Dimensions

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

6.70

7.30

B

13°TYP.

C

2.90

3.10

J

2.30 REF.

D

0.02

0.10

1

6.30

6.70

E

0°

10°

2

6.30

6.70

I

0.60

0.80

3

3.30

3.70

H

0.25

0.35

4

3.30

3.70

5

1.40

1.80

Absolute Maximum Ratings at Ta = 25 ::::

Parameter

Symbol

Ratings

Unit

Junction Temperature

Tj

+150

Storage Temperature

Tstg

-55~+150

Collector to Base Voltage

VCBO

-140

V

Collector to Emitter Voltage

VCEO

-100

V

Emitter to Base Voltage

VEBO

-6

V

Collector Current (DC)

IC

-5

A

Collector Current (Pulse)

IC

-10

A

Total Power Dissipation

PD

3

W

*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4

square inch minimum.

Electrical Characteristics(Ta = 25 : ,unless otherwise stated)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-140

-

V

IC=-100uA , IE=0

*BVCEO

-100

-

V

IC=-10mA, IB=0

BVEBO

-6

-

V

IE=-100uA ,IC=0

ICBO

-

-50

nA

VCB=-100V, IE=0

ICES

-

-50

nA

VCES=-100V

IEBO

-

-10

nA

VEB=-6V, IC=0

*VCE(sat)1

-

-20

-50

mV

IC=-100mA, IB=-10mA

*VCE(sat)2

-

-90

-115

mV

IC=-1A, IB=-100mA

*VCE(sat)3

-

-160

-220

mV

IC=-2A, IB=-200mA

*VCE(sat)4

-

-300

-420

mV

IC=-4A, IB=-400mA

*VBE(sat)

-

-1.01

-1.17

V

IC=-4A, IB=-400mA

*VBE(on)

-

-0.925

-1.16

V

VCE=-1V, IC=-4A

*hFE1

100

200

VCE=-1V, IC=-10mA

*hFE2

100

200

300

VCE=-1V, IC=-1A

*hFE3

50

90

VCE=-1V, IC=-3A

*hFE4

30

50

VCE=-1V, IC=-4A

*hFE5

-

15

VCE=-1V, IC=-10A

fT

-

125

-

MHz

VCE=-10V, IC=-100mA, f=50MHz

SOT-223

Аналогичный номер детали - GL359

производитель	номер детали	датащи	подробное описание детали
GTM CORPORATION	GL359	330Kb / 2P	PNP SILICON PLANAR HIGH CURRENT TRANSISTOR
GENESYS LOGIC	GL3590	1Mb / 47P	USB 3.1 Gen 2 Hub Controller Revision 1 7 0 May 08 , 20 20
	GL3590-OTY10	1Mb / 47P	USB 3.1 Gen 2 Hub Controller Revision 1 7 0 May 08 , 20 20
	GL3590-OV1S1	1Mb / 47P	USB 3.1 Gen 2 Hub Controller Revision 1 7 0 May 08 , 20 20
	GL3590-OV3S1	1Mb / 47P	USB 3.1 Gen 2 Hub Controller Revision 1 7 0 May 08 , 20 20

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Аналогичное описание - GL359

производитель	номер детали	датащи	подробное описание детали
E-Tech Electronics LTD	GI1182	283Kb / 2P	P N P S I L I C O N E P I T A X I A L P L A N A R T R A N S I S T O R
	GISD1803	276Kb / 3P	N P N E P I T A X I A L P L A N A R S I L I C O N T R A N S I S T O R
	GJ1182	282Kb / 2P	P N P S I L I C O N E P I T A X I A L P L A N A R T R A N S I S T O R
	GL156	296Kb / 2P	N P N S I L I CO N P L A N A R H I G H P E R F O RM A N C E T R A N S I S T O R
	GL157	312Kb / 2P	P N P S I L I CO N P L A N A R H I G H P E R F O RM A N C E T R A N S I S T O R
	GL158	297Kb / 2P	N P N S I L I CO N P L A N A R H I G H C U R R E N T T R A N S I S T O R
	GL159	329Kb / 2P	P N P S I L I CO N P L A N A R H I G H C U R R E N T T R A N S I S T O R
	GM156	267Kb / 2P	N P N S I L I CO N P L A N A R H I G H P E R F O RM A N C E T R A N S I S T O R
	GM157	356Kb / 2P	P N P S I L I CO N P L A N A R H I G H P E R F O RM A N C E T R A N S I S T O R
	GL358	298Kb / 2P	N P N S I L I CO N P L A N A R H I G H C U R R E N T T R A N S I S T O R

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GL359 датащи(PDF) 1 Page - E-Tech Electronics LTD

GL359 датащи(HTML) 1 Page - E-Tech Electronics LTD

Аналогичный номер детали - GL359

Аналогичное описание - GL359

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