GDMBD4148 datasheet(1/2 Pages) ETL

номер детали	GDMBD4148

подробное описание детали	S U R F A C E M O U N T, S WI T C H I N G D I O D E V O LTAG E 7 5 V, C U R R E N T 0 . 2 A

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производитель	ETL [E-Tech Electronics LTD]

домашняя страница	http://e-tech.com.hk

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ISSUED DATE :2004/12/13

REVISED DATE :

G

G D

D M

M B

B D

D 44114488

S

S U

U R

R F

F A

A C

C E

E M

M O

O U

U N

N T

T ,, S

S W

W II T

T C

C H

H II N

N G

G D

D II O

O D

D E

E

V O L T A G E 7 5 V, C U R R E N T 0 . 2 A

Description

The GDMBD4148 is designed for high-speed switching application in hybrid thick and thin-film circuits. The devices is manufactured by the

silicon epitaxial planar process and packed in plastic surface mount package.

Package Dimensions

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

0.85

1.05

A1

0

0.10

L

0.20

0.40

A2

0.80

1.00

b

0.25

0.40

D

1.15

1.45

c

0.10

0.18

E

1.60

1.80

HE

2.30

2.70

Q1

0.15 BSC.

Absolute Maximum Ratings at Ta = 25 ::::

Parameter

Symbol

Ratings

Unit

Junction Temperature

Tj

+150

Storage Temperature

Tstg

-65 ~ +150

Maximum Peak Reverse Voltage

VRM

100

V

Maximum Reverse Voltage

VR

75

V

Average Forward Current

IO

200

mA

Surge Current(1us)

IFSM

2

A

Typical Junction Capacitance between Terminal (Note 1)

CJ

4.0

pF

Maximum Reverse Recovery Time (Note2)

TRR

4.0

nSec

Total Power Dissipation

PD

225

mW

Electrical Characteristics at Ta = 25 ::::

Characteristic

Symbol

Min.

Max.

Unit

Test Conditions

Forward Voltage

VF

-

1

V

IF=10mA

Reverse Breakdown

VR

100

-

V

IR=100uA

Reverse Current

IR

-

5

uA

VR=75V

Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 0 volt.

2. Measured at applied forward current of 10mA, reverse current of 1.0mA, Reverse voltage of 6.0volt and RL=100

ß .

3. ESD sensitive product handling required.

Аналогичный номер детали - GDMBD4148

производитель	номер детали	датащи	подробное описание детали
GTM CORPORATION	GDMBD4148	277Kb / 2P	SURFACE MOUNT,SWITCHING DIODE

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Аналогичное описание - GDMBD4148

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E-Tech Electronics LTD	GD1SS355	155Kb / 2P	S U R F A C E M O U N T, S WI T C H I N G D I O D E V O LTAG E 9 0 V, C U R R E N T 0 . 1 A
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	GDMA77	201Kb / 2P	S U R F A C E M O U N T, B A N D S WI T C H I N G D I O D E V O LTAG E 3 5 V, C U R R E N T 0 . 1 A
	GN202K	173Kb / 2P	S U R F A C E M O U N T, S WI T C H I N G D I O D E V O LTAG E 8 0 V, C U R R E N T 0 . 1 A
	GS228U	157Kb / 2P	S U R F A C E M O U N T , S WI T C H I N G D I O D E V O LTAG E 8 0 V, C U R R E N T 0 . 1 A
	GSBAS16	121Kb / 2P	S U R F A C E M O U N T , S W I T C H I N G D I O D E V O LTAG E 8 5 V, C U R R E N T 2 5 0mA
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	GSN202U	162Kb / 2P	S U R F A C E M O U N T , S WI T C H I N G D I O D E V O LTAG E 8 0 V, C U R R E N T 0 . 1 A
	GSN217U	143Kb / 2P	S U R F A C E M O U N T , S WI T C H I N G D I O D E V O LTAG E 8 0 V, C U R R E N T 0 . 1 A
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GDMBD4148 датащи(PDF) 1 Page - E-Tech Electronics LTD

GDMBD4148 датащи(HTML) 1 Page - E-Tech Electronics LTD

Аналогичный номер детали - GDMBD4148

Аналогичное описание - GDMBD4148

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