GDBAS40 datasheet(1/2 Pages) ETL

номер детали	GDBAS40

подробное описание детали	S U R FA C E MO U N T, S C HO T T K Y B A R R I E R D I O D E V O LTAG E 4 0 V, C U R R E N T 0 . 2 A

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производитель	ETL [E-Tech Electronics LTD]

домашняя страница	http://e-tech.com.hk

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CORPORATION

GDBAS40

Page: 1/2

ISSUED DATE :2005/12/20

REVISED DATE :

G

G D

D B

B A

AS

S 4400

S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E

V O L T A G E 4 0 V, C U R R E N T 0 . 2 A

Description

The GDBAS40 is designed for high speed switching applications, circuit protection and voltage clamping.

Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand

held and portable applications where space is limited.

Package Dimensions

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

0.85

1.05

A1

0

0.10

L

0.20

0.40

A2

0.80

1.00

b

0.25

0.40

D

1.15

1.45

c

0.10

0.18

E

1.60

1.80

HE

2.30

2.70

Q1

0.15 BSC.

Absolute Maximum Ratings at TA = 25 ::::

Parameter

Symbol

Ratings

Unit

Operating Junction Temperature

Tj

-55 ~ +125

:

Storage Temperature

Tstg

-55 ~ +150

:

Maximum Repetitive Peak Reverse Voltage

VRRM

40

V

Thermal Resistance Junction to Ambient Air

R JA

445

: /W

Peak Forward Surge Current at tp < 1.0s

IFSM

0.6

A

Maximum Average Forward Rectified Current

Io

0.2

A

Total Power Dissipation

PD

225

mW

Electrical Characteristics (at TA = 25 : unless otherwise noted)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Reverse Breakdown Voltage

V(BR)R

40

-

V

IR=10 A

-

380

IF1=1mA

Forward Voltage(tp < 300uS)

VF

-

1000

mV

IF2=40mA

Reverse Leakage Current

IR

-

200

nA

VR=30V

Total Capacitance

CT

-

5.0

pF

VR=0V, f=1MHz

Reverse Recover Time

Trr

-

5.0

ns

IF=IR=10mA, RL=100 , Irr=1mA

Аналогичный номер детали - GDBAS40

производитель	номер детали	датащи	подробное описание детали
GTM CORPORATION	GDBAS40	168Kb / 2P	SURFACE MOUNT SCHOTTKY BARRIER DIODE

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Аналогичное описание - GDBAS40

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E-Tech Electronics LTD	GD103SD	197Kb / 2P	S U R FA C E MO U N T, S C H O T T K Y B A R R I E R D I O D E V O LTAG E 4 0 V, C U R R E N T 3 5 0mA
	GDBAS70	133Kb / 2P	S U R FA C E MO U N T, S C HO T T K Y B A R R I E R D I O D E V O LTAG E 4 0 V, C U R R E N T 0 . 2 A
	GDBAT54	281Kb / 2P	S U R FA C E MO U N T, S C H O T T K Y B A R R I E R D I O D E V O LTAG E 4 0 V, C U R R E N T 3 5 0mA
	GEMBR2070-20150CT	321Kb / 2P	S C HO T T K Y B A R R I E R R E C T I F I E R S R E V E R S E VO LTAG E 7 0 V T O 1 5 0 V, C U R R E N T 2 0 A
	GESBL1030-1060CT	332Kb / 2P	S C HO T T K Y B A R R I E R R E C T I F I E R S R E V E R S E VO LTAG E 7 0 V T O 1 5 0 V, C U R R E N T 2 0 A
	GJSBL340-360	420Kb / 2P	S C HO T T K Y B A R R I E R R E C T I F I E R S R E V E R S E VO LTAG E 7 0 V T O 1 5 0 V, C U R R E N T 2 0 A
	GJSBL1030-1060CT	319Kb / 2P	S C HO T T K Y B A R R I E R R E C T I F I E R S R E V E R S E VO LTAG E 7 0 V T O 1 5 0 V, C U R R E N T 2 0 A
	GSBAS40	214Kb / 2P	S U R FA C E MO U N T, S C HO T T K Y B A R R I E R D I O D E V O LTAG E 4 0 V, C U R R E N T 0 . 2 A
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Аналогичный номер детали - GDBAS40

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