GD1SS355 datasheet(1/2 Pages) ETL

номер детали	GD1SS355

подробное описание детали	S U R F A C E M O U N T, S WI T C H I N G D I O D E V O LTAG E 9 0 V, C U R R E N T 0 . 1 A

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производитель	ETL [E-Tech Electronics LTD]

домашняя страница	http://e-tech.com.hk

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ISSUED DATE :2004/09/20

REVISED DATE :

G

G D

D 11S

S S

S 335555

S

S U

U R

R F

F A

A C

C E

E M

M O

O U

U N

N T

T ,, S

S W

W II T

T C

C H

H II N

N G

G D

D II O

O D

D E

E

V O L T A G E 9 0 V, C U R R E N T 0 . 1 A

Description

The GD1SS355 is designed for ultra high speed switching and high reliability with high surge current handling capability.

Package Dimensions

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

0.85

1.05

A1

0

0.10

L

0.20

0.40

A2

0.80

1.00

b

0.25

0.40

D

1.15

1.45

c

0.10

0.18

E

1.60

1.80

HE

2.30

2.70

Q1

0.15 BSC.

:

Parameter

Symbol

Ratings

Unit

Junction Temperature

Tj

+125

Storage Temperature

Tstg

-55 ~ +125

Maximum Peak Repetitive Reverse Voltage

VRRM

90

V

Maximum RMS Voltage

VRMS

63

V

Maximum DC Blocking Voltage

VDC

80

V

Peak Forward Surge Current at 8.3mSec single half sine-wave

IFSM

0.5

A

Typical Junction Capacitance between Terminal (Note 1)

CJ

3.0

pF

Maximum Reverse Recovery Time (Note2)

TRR

4.0

nSec

Maximum Average Forward Rectified Current

Io

0.1

A

Total Power Dissipation

PD

225

mW

Characteristics at Ta = 25 ::::

Characteristics

Symbol

Max

Unit

Test Condition

Maximum Instantaneous Forward Voltage

VF

1.20

V

IF = 100mA

Maximum Average Reverse Current

IR

0.1

uA

VR = 80V

Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 6.0 volt.

2. Measured at applied forward current of 10mA and reverse voltage of 6.0 volt.

3. ESD sensitive product handling required.

Аналогичный номер детали - GD1SS355

производитель	номер детали	датащи	подробное описание детали
GTM CORPORATION	GD1SS355	148Kb / 2P	SURFACE MOUNT,SWITCHING DIODE

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Аналогичное описание - GD1SS355

производитель	номер детали	датащи	подробное описание детали
E-Tech Electronics LTD	GDMA77	201Kb / 2P	S U R F A C E M O U N T, B A N D S WI T C H I N G D I O D E V O LTAG E 3 5 V, C U R R E N T 0 . 1 A
	GDMBD4148	282Kb / 2P	S U R F A C E M O U N T, S WI T C H I N G D I O D E V O LTAG E 7 5 V, C U R R E N T 0 . 2 A
	GN202K	173Kb / 2P	S U R F A C E M O U N T, S WI T C H I N G D I O D E V O LTAG E 8 0 V, C U R R E N T 0 . 1 A
	GS228U	157Kb / 2P	S U R F A C E M O U N T , S WI T C H I N G D I O D E V O LTAG E 8 0 V, C U R R E N T 0 . 1 A
	GS420SD	169Kb / 2P	S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O L T A G E 4 0 V, C U R R E N T 0 . 1 A
	GS421SD	155Kb / 2P	S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O L T A G E 4 0 V, C U R R E N T 0 . 1 A
	GSMBD4148	283Kb / 2P	S U R F A C E M O U N T, S WI T C H I N G D I O D E V O LTAG E 7 5 V, C U R R E N T 0 . 2 A
	GSN202U	162Kb / 2P	S U R F A C E M O U N T , S WI T C H I N G D I O D E V O LTAG E 8 0 V, C U R R E N T 0 . 1 A
	GSN217U	143Kb / 2P	S U R F A C E M O U N T , S WI T C H I N G D I O D E V O LTAG E 8 0 V, C U R R E N T 0 . 1 A
	GSP202U	161Kb / 2P	S U R F A C E M O U N T , S WI T C H I N G D I O D E V O LTAG E 8 0 V, C U R R E N T 0 . 1 A

More results

GD1SS355 датащи(PDF) 1 Page - E-Tech Electronics LTD

GD1SS355 датащи(HTML) 1 Page - E-Tech Electronics LTD

Аналогичный номер детали - GD1SS355

Аналогичное описание - GD1SS355

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