IXTH10P60 datasheet(1/5 Pages) IXYS

номер детали	IXTH10P60

подробное описание детали	Power MOSFETs

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производитель	IXYS [IXYS Corporation]

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Power MOSFETs

DS98849E(01/13)

IXTT10P60

IXTH10P60

P-Channel Enhancement Mode

Avalanche Rated

V

DSS

= - 600V

I

D25

= - 10A

R

DS(on) ≤

≤≤≤≤

1

Ω

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

- 600

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

- 600

V

GSS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C = 25°C

- 10

A

I

DM

T

C = 25°C, Pulse Width Limited by TJM

- 40

A

I

A

T

C = 25°C

- 10

A

E

AS

T

C = 25°C3

J

P

D

T

C = 25°C

300

W

T

J

- 55 ... +150

°C

T

JM

150

°C

T

stg

- 55 ... +150

°C

T

L

1.6mm (0.062in.) from Case for 10s

300

°C

T

sold

Plastic Body for 10 seconds

260

°C

M

d

Mounting Torque (TO-247)

1.13 / 10

Nm/lb.in.

Weight

TO-268

4

g

TO-247

6

g

G = Gate

D

= Drain

S = Source

Tab = Drain

TO-247 (IXTH)

G

S

D (Tab)

D

TO-268 (IXTT)

S

G

D (Tab)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = - 250μA

- 600

V

GS(th)

V

DS = VGS, ID = - 250μA

- 3.0

- 5.0

V

I

GSS

V

GS = ± 20V, VDS = 0V

±100 nA

I

DSS

V

DS = 0.8 • VDSS, VGS = 0V

- 25

μA

T

J = 125°C

-1 mA

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Note 1

1

Ω

Features

International Standard Packages

Low R

DS (on) HDMOS

TM

Process

Rugged Polysilicon Gate Cell Structure

Avalanche Rated

Low Package Inductance

- Easy to Drive and to Protect

Advantages

Easy to Mount

Space Savings

High Power Density

Applications

High-Side Switching

Push Pull Amplifiers

DC Choppers

Automatic Test Equipment

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IXYS Corporation	IXTH10P60	70Kb / 2P	Standard Power MOSFET

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