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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IXTY18P10T датащи(PDF) 1 Page - IXYS Corporation |
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IXTY18P10T датащи(HTML) 1 Page - IXYS Corporation |
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1 / 6 page  © 2013 IXYS CORPORATION, All Rights Reserved Symbol Test Conditions Maximum Ratings V DSS T J = 25 °C to 150°C -100 V V DGR T J = 25 °C to 150°C, R GS = 1MΩ -100 V V GSS Continuous ±15 V V GSM Transient ±25 V I D25 T C = 25°C -18 A I DM T C = 25°C, Pulse Width Limited by TJM - 60 A I A T C = 25°C -18 A E AS T C = 25°C 200 mJ P D T C = 25°C83 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C T L 1.6mm (0.062 in.) from Case for 10s 300 °C T SOLD Plastic Body for 10s 260 °C M d Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in. Weight TO-252 0.35 g TO-263 2.50 g TO-220 3.00 g DS99966C(01/13) Symbol Test Conditions Characteristic Values (T J = 25°C, Unless Otherwise Specified) Min. Typ. Max. BV DSS V GS = 0V, ID = - 250μA -100 V V GS(th) V DS = VGS, ID = - 250μA - 2.5 - 4.5 V I GSS V GS = ± 15V, VDS = 0V ±50 nA I DSS V DS = VDSS, VGS = 0V - 3 μA T J = 125°C -100 μA R DS(on) V GS = -10V, ID = 0.5 • ID25, Note 1 120 m Ω TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTY18P10T IXTA18P10T IXTP18P10T V DSS = -100V I D25 = -18A R DS(on) ≤ ≤≤≤≤ 120m Ω Ω Ω Ω Ω Features International Standard Packages Avalanche Rated Extended FBSOA Fast Intrinsic Diode Low R DS(ON) and QG Advantages Easy to Mount Space Savings High Power Density Applications High-Side Switching Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators Battery Charger Applications G = Gate D = Drain S = Source Tab = Drain TO-252 (IXTY) TO-263 AA (IXTA) G S D (Tab) G D S TO-220AB (IXTP) D (Tab) G S D (Tab) |
Аналогичный номер детали - IXTY18P10T |
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Аналогичное описание - IXTY18P10T |
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