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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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RG2J датащи(PDF) 2 Page - General Semiconductor |
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RG2J датащи(HTML) 2 Page - General Semiconductor |
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2 / 2 page  1 10 100 0 10 20 30 40 50 110 100 1 10 30 2.0 1.0 1.5 0.5 0 50 75 100 125 150 175 25 20 10 1 0.1 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 2040 6080 100 0.01 0.1 1 10 20 RATINGS AND CHARACTERISTIC CURVES RG2A AND RG2M FIG. 1 - FORWARD CURRENT DERATING CURVE FIG. 3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG. 5 - TYPICAL JUNCTION CAPACITANCE RESISTIVE OR INDUCTIVE LOAD TJ=25 °C PULSE WIDTH=300 µs 1% DUTY CYCLE TJ=25 °C f=1.0 MHz Vsig=50mVp-p max. AMBIENT TEMPERATURE, °C NUMBER OF CYCLES AT 60 HZ REVERSE VOLTAGE, VOLTS FIG. 2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG. 4 - TYPICAL REVERSE CHARACTERISTICS PERCENTAGE OF RATED PEAK REVERSE VOLTAGE, % TJ=TJ max. 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) TJ=125 °C TJ=75 °C TJ=25 °C CAPACITANCE LOAD Ipk/IAV= 5.0 10 20 0.375" (9.5mm) LEAD LENGTH Ipk/IAV= π |
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