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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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RG1J датащи(PDF) 2 Page - General Semiconductor |
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RG1J датащи(HTML) 2 Page - General Semiconductor |
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2 / 2 page  0 255075 100 125 30 175 0 0.2 0.4 0.6 0.8 1.0 1 10 100 1 10 30 20 10 0 1 10 100 20 10 1 0.1 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 150 020 40 60 80 100 0.01 0.1 1 10 20 RATINGS AND CHARACTERISTIC CURVES RG1A AND RG1M FIG. 1 - FORWARD CURRENT DERATING CURVE FIG. 3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG. 5 - TYPICAL JUNCTION CAPACITANCE RESISTIVE OR INDUCTIVE LOAD PULSE WIDTH=300 µs 1% DUTY CYCLE TJ=25 °C f=1.0 MHz Vsig, 50mVp-p max. AMBIENT TEMPERATURE, °C NUMBER OF CYCLES AT 60 HZ REVERSE VOLTAGE, VOLTS FIG. 2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG. 4 - TYPICAL REVERSE CHARACTERISTICS PERCENTAGE OF RATED PEAK REVERSE VOLTAGE, % TA=25 °C 8.3ms SINGLE HALF SINE-WAVE(JEDEC Method) TJ=125 °C TJ=75 °C TJ=25 °C TJ=25 °C CAPACITANCE LOAD Ipk/IAV= 5.0 10 20 0.375" (9.5mm) LEAD LENGTH Ipk/IAV= π |
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