Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,

the Cree logo, G•SiC and MegaBright are registered trademarks, and MegaBright Max, MB Max and MB are trademarks of Cree,

Inc.

2

CPR3CK Rev. C

Cree, Inc.

4600 Silicon Drive

Durham, NC 27703

USA Tel: +1.919.313.5300

www.cree.com

Maximum Ratings at T

Notes &3

CxxxMB290-Sxx00

DC Forward Current

30 mA

Peak Forward Current (1/10 duty cycle @ 1kHz)

100 mA

LED Junction Temperature

125°C

Reverse Voltage

5 V

Operating Temperature Range

-40°C to +100°C

Storage Temperature Range

-40°C to +100°C

1000 V

Class 2

Typical Electrical/Optical Characteristics at T

Note 3

Part Number

Forward Voltage (V

Reverse Current

[I(Vr=5V), μA]

Full Width Half Max.

(

λ

Min.

Typ.

Max.

Max.

Typ.

C460MB290-Sxx00

2.9

3.3

3.7

2

21

C470MB290-Sxx00

2.9

3.3

3.7

2

22

C505MB290-S0600

2.9

3.3

3.9

2

30

C527MB290-S0500

2.9

3.3

3.9

2

35

Mechanical Specifications

CxxxMB290-Sxx00

Description

Dimension

Tolerance

P-N Junction Area (μm)

250 x 250

± 25

Top Area (μm)

300 x 300

± 25

Bottom Area (μm)

200 x 200

± 25

Chip Thickness (μm)

250

± 25

Au Bond Pad Diameter (μm)

112

± 20

Au Bond Pad Thickness (μm)

1.2

± 0.5

Backside Metal Diameter (μm)

104

± 20

Notes:

Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000

epoxy) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die

but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1

3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing

temperature must not exceed 325°C (< 5 seconds).

Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche

energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. The RAET procedure is

performed on each die. The ESD classification of Class 2 is based on sample testing according to MIL-STD-883E.

All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled

and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given

are within the range of average values expected by the manufacturer in large quantities and are provided for information only.

All measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy). Dominant wavelength measurements

taken using Illuminance E.

Caution: To obtain optimum output efficiency, the maximum height of die attach epoxy on the side of the chip should not exceed

80 μm.

Specifications are subject to change without notice.

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