MMBT4401 datasheet(2/3 Pages) GE

2 / 3 page

MMBT4401

ELECTRICAL CHARACTERISTICS

Ratings at 25¡C ambient temperature unless otherwise specified

SYMBOL

MIN.

MAX.

UNIT

Collector-Base Breakdown Voltage

at IC = 0.1 mA, IE = 0

V(BR)CBO

Volts

Collector-Emitter Breakdown Voltage(1)

at IC = 1 mA, IB = 0

V(BR)CEO

Volts

Emitter-Base Breakdown Voltage

at IE = 0.1 mA, IC = 0

V(BR)EBO

6.0

Volts

Collector-Emitter Saturation Voltage

at IC = 150 mA, IB = 15 mA

VCEsat

0.40

Volts

at IC = 500 mA, IB = 50 mA

VCEsat

0.75

Volts

Base-Emitter Saturation Voltage

at IC = 150 mA, IB = 15 mA

VBEsat

0.75

0.95

Volts

at IC = 500 mA, IB = 50 mA

VBEsat

1.20

Volts

Collector Cutoff Current

at VEB = 0.4 V, VCE = 35 V

ICEX

100

Base Cutoff Current

at VEB = 0.4 V, VCE = 35 V

IBEV

100

DC Current Gain

at VCE = 1 V, IC = 0.1 mA

hFE

at VCE = 1 V, IC = 1 mA

hFE

at VCE = 1 V, IC = 10 mA

hFE

at VCE = 1 V, IC = 150 mA

(1)

hFE

100

300

at VCE = 2 V, IC = 500 mA

(1)

hFE

Input Impedance

at VCE = 10 V, IC = 1 mA, f = 1 kHz

hie

115

Voltage Feedback Ratio

at VCE = 10 V, IC = 1 mA, f = 1 kHz

hre

0.1 ¥ 10-4

8 ¥ 10-4

Current Gain-Bandwidth Product

at VCE = 10 V, IC = 20 mA, f = 100 MHz

250

MHz

Collector-Base Capacitance

at VCB = 5 V,f = 1 MHz, IE=0

CCBO

6.5

Emitter-Base Capacitance

at VEB = 0.5 V,f = 1 MHz, IC=0

CEBO

Ð30

NOTES:

(1) Pulse test: pulse width ²300

ms, cycle ² 2.0%

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