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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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MBRB2545CT датащи(PDF) 1 Page - General Semiconductor |
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MBRB2545CT датащи(HTML) 1 Page - General Semiconductor |
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1 / 2 page  MBRB2535CT THRU MBRB2560CT SCHOTTKY RECTIFIER Reverse Voltage - 35 to 60 Volts Forward Current - 30.0 Amperes FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Dual rectifier construction, positive center-tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low forward voltage drop ♦ High surge capability ♦ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications ♦ Guardring for overvoltage protection ♦ High temperature soldering in accordance with CECC 802 / Reflow guaranteed MECHANICAL DATA Case: JEDEC TO-263AB molded plastic body Terminals: Lead solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting Position: Any Weight: 0.08 ounce, 2.24 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. SYMBOLS MBRB2535CT MBRB2545CT MBRB2550CT MBRB2560CT UNITS Maximum repetitive peak reverse voltage VRRM 35 45 50 60 Volts Maximum working peak reverse voltage VRWM 35 45 50 60 Volts Maximum DC blocking voltage VDC 35 45 50 60 Volts Maximum average forward rectified current at TC=130°C I(AV) 30.0 Amps Peak repetitive forward current per leg at TC=130°C (rated VR, square wave, 20 KHZ) IFRM 30.0 Amps Peak forward surge current 8.3ms single half sine-wave superimposed IFSM 150.0 Amps on rated load (JEDEC Method) Peak repetitive reverse surge current (NOTE 1) IRRM 1.0 0.5 Amps Maximum instantaneous forward voltage IF=15.0A,TC=25°C - 0.75 per leg at: (NOTE 2) IF=15.0A,TC=25°C - 0.65 IF= 30A, TC=25°C VF 0.82 - Volts IF= 30A, TC=125°C 0.73 - Maximum instantaneous reverse current at rated DC blocking voltage per leg (NOTE 2) TC=25°C IR 0.2 1.0 mA TC=125°C 40.0 50.0 Maximum thermal resistance (NOTE 3) R ΘJC 1.5 °C/W Voltage rate of change (rated VR) dv/dt 10,000 V/ µs Operating junction temperature range TJ -65 to +150 °C Storage temperature range TSTG -65 to +175 °C NOTES: (1) 2.0 µs pulse width, f=1.0 KHZ (2) Pulse test: 300 µs pulse width, 1% duty cycle (3) Thermal resistance from junction to case per leg 4/98 TO-263AB Dimensions in inches and (millimeters) -T- SEATING PLATE 0.380 (9.65) 0.420 (10.67) 0.320 (8.13) 0.360 (9.14) 0.575 (14.60) 0.625 (15.88) 0.027 (0.686) 0.037 (0.940) 1 2 0.160 (4.06) 0.190 (4.83) 0.045 (1.14) 0.055 (1.40) 0.018 (0.46) 0.025 (0.64) 0.080 (2.03) 0.110 (2.79) 0.090 (2.29) 0.110 (2.79) 0.245 (6.22) MIN - HEATSINK PIN 1 K K 0.095 (2.41) 0.100 (2.54) K PIN 2 0.047 (1.19) 0.055 (1.40) NEW PRODUCT NEW PRODUCT NEW PRODUCT |
Аналогичный номер детали - MBRB2545CT |
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Аналогичное описание - MBRB2545CT |
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