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MBR3045PT датащи(PDF) 1 Page - General Semiconductor |
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MBR3045PT датащи(HTML) 1 Page - General Semiconductor |
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1 / 2 page ![]() MBR3035PT THRU MBR3060PT SCHOTTKY RECTIFIER Reverse Voltage - 35 to 60 Volts Forward Current - 30.0 Amperes FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Dual rectifier construction, positive center-tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low forward voltage drop ♦ High surge capability ♦ For use in low voltage, high frequency inverters, free-wheeling, and polarity protection applications ♦ Guardring for overvoltage protection ♦ High temperature soldering guaranteed: 250°C/10 seconds, 0.17” (4.3mm) from case MECHANICAL DATA Case: JEDEC TO-247AD molded plastic body Terminals: Lead solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting Position: Any Mounting Torque: 10 in.- lbs. max. Weight: 0.2 ounce, 5.6 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. SYMBOLS MBR3035PT MBR3045PT MBR3050PT MBR3060PT UNITS Maximum repetitive peak reverse voltage VRRM 35 45 50 60 Volts Maximum working peak reverse voltage VRWM 35 45 50 60 Volts Maximum DC blocking voltage VDC 35 45 50 60 Volts Maximum average forward rectified current (SEE FIG. 1) I(AV) 30.0 Amps Peak repetitive forward current per leg at TC=105°C (rated VR, square wave, 20 KHZ) IFRM 30.0 Amps Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 200.0 Amps Peak repetitive reverse surge current (NOTE 2) IRRM 2.0 1.0 Amps Maximum instantaneous forward voltage per leg at: IF=20A, TC=25°C _ 0.75 (NOTE 1) IF=20A, TC=125°C VF 0.60 0.65 Volts IF=30A, TC=25°C 0.76 _ IF=30A, TC=125°C 0.72 _ Maximum instantaneous reverse current at rated DC blocking voltage TC=25°C IR 1.0 5.0 mA per leg (NOTE 2) TC=125°C 60.0 100.0 Maximum thermal resistance (NOTE 3)R ΘJC 1.4 °C/W Voltage rate of change at (rated VR) dv/dt 10,000 V/ µs Operating junction temperature range TJ -65 to +150 °C Storage temperature range TSTG -65 to +175 °C NOTES: (1) 2.0 µs pulse width, f=1.0 KHZ (2) Pulse test: 300 µs pulse width, 1% duty cycle (3) Thermal resistance from junction to case per leg 4/98 PIN 1 PIN 3 CASE 0.245 (6.2) 0.225 (5.7) 0.645 (16.4) 0.625 (15.9) 0.323 (8.2) 0.313 (7.9) 0.142 (3.6) 0.138 (3.5) 0.170 (4.3) 0.086 (2.18) 0.076 (1.93) 0.160 (4.1) 0.140 (3.5) 0.225 (5.7) 0.205 (5.2) 0.127 (3.22) 0.117 (2.97) 0.048 (1.22) 0.044 (1.12) 0.795 (20.2) 0.775 (19.6) 0.840 (21.3) 0.820 (20.8) 1 2 3 0.078 REF (1.98) 0.203 (5.16) 0.193 (4.90) 10 o TYP. BOTH SIDES 30o 10 o 1 o REF. 0.118 (3.0) 0.108 (2.7) 0.030 (0.76) 0.020 (0.51) BOTH SIDES PIN 2 TO-247AD Dimensions in inches and (millimeters) |
Аналогичный номер детали - MBR3045PT |
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Аналогичное описание - MBR3045PT |
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