IXTH41N25 datasheet(1/4 Pages) IXYS

номер детали	IXTH41N25

подробное описание детали	N-Channel Enhancement Mode

PDF	4 Pages

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производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

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1 / 4 page

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C unless otherwise specified)

Min. Typ.

Max.

V

DSS

V

GS

= 0 V, I

D = 250 µA

250

V

GS(th)

V

DS

= V

GS, ID = 250 µA

2.0

4.0

V

I

GSS

V

GS

= ±20 V DC, V

DS = 0

±100

nA

I

DSS

V

DS

= V

DSS

25

µA

V

GS

= 0 V

T

J = 125°C

250

µA

R

DS(on)

V

GS

= 10 V, I

D = 15A

60

72 m

Ω

Pulse test, t

≤ 300 ms, duty cycle d ≤ 2%

DS98954B(08/03)

Standard

Power MOSFET

N-Channel Enhancement Mode

Symbol

Test conditions

Maximum ratings

V

DSS

T

J

= 25°C to 150°C

250

V

DGR

T

J

= 25°C to 150°C; R

GS = 1.0 MΩ

250

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C

= 25

°C MOSFET chip capability

41

A

I

DM

T

C

= 25

°C, pulse width limited by T

JM

164

A

I

AR

41

A

E

AR

T

C

= 25

°C30

mJ

E

AS

T

C

= 25

°C

1.0

J

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS

5

V/ns

T

J

≤ 150°C, R

G = 2 Ω

P

D

T

C

= 25

°C

300

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

M

d

Mounting torque

1.13/10 Nm/lb.in.

Weight

TO-264

6

g

TO-247 AD

G = Gate

D

= Drain

S = Source

Tab = Drain

IXTH 41N25

V

DSS

= 250

V

I

D(cont)

=

41

A

R

DS(on)

=

72 m

Ω

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

300

°C

G

D

S

D (TAB)

Features

•

Low R

DS (on) HDMOS

TM

process

•

Rugged polysilicon gate cell structure

•

International standard package

JEDEC TO-247 AD

•

Fast switching times

•

High commutating dv/dt rating

Applications

•

Motor controls

•

DC choppers

•

Switched-mode and resonant-mode

power supplies

•

Uninterruptible Power Supplies (UPS)

Advantages

•

Easy to mount with one screw

(isolated mounting screw hole)

•

Space savings

•

High power density

Preliminary Data Sheet

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