BAT54SWT1G datasheet(2/4 Pages) ONSEMI

номер детали	BAT54SWT1G

подробное описание детали	Dual Series Schottky Barrier Diodes

PDF	4 Pages

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производитель	ONSEMI [ON Semiconductor]

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BAT54SWT1G, NSVBAT54SWT1G

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE)

Characteristic

Symbol

Min

Typ

Max

Unit

Reverse Breakdown Voltage

(IR = 10 mA)

V(BR)R

−

Total Capacitance

(VR = 1.0 V, f = 1.0 MHz)

−

7.6

Reverse Leakage

(VR = 25 V)

−

0.5

2.0

mAdc

Forward Voltage

(IF = 0.1 mAdc)

−

0.22

0.24

Vdc

Forward Voltage

(IF = 30 mAdc)

−

0.41

0.5

Vdc

Forward Voltage

(IF = 100 mAdc)

−

0.52

0.8

Vdc

Reverse Recovery Time

(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1)

trr

−

5.0

Forward Voltage

(IF = 1.0 mAdc)

−

0.29

0.32

Vdc

Forward Voltage

(IF = 10 mAdc)

−

0.35

0.40

Vdc

Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.

Notes: 3. tp » trr

+10 V

2 k

820W

0.1 mF

DUT

100 mH

0.1 mF

50 WOUTPUT

PULSE

GENERATOR

50 W INPUT

SAMPLING

OSCILLOSCOPE

10%

90%

trr

iR(REC) = 1 mA

OUTPUT PULSE

(IF = IR = 10 mA; measured

at iR(REC) = 1 mA)

INPUT SIGNAL

Figure 1. Recovery Time Equivalent Test Circuit

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