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ADS820

2

SBAS037B

SPECIFIED

PACKAGE

TEMPERATURE

PACKAGE

ORDERING

TRANSPORT

PRODUCT

PACKAGE-LEAD

DESIGNATOR

RANGE

MARKING

NUMBER

MEDIA, QUANTITY

ADS820

SO-8

DW

–40

°C to +85°C

ADS820U

ADS820U

Rails, 28

""

"

"

"

ADS820U/1K

Tape and Reel, 1000

ADS820U

PARAMETER

CONDITIONS

TEMP

MIN

TYP

MAX

UNITS

ELECTRICAL CHARACTERISTICS

Resolution

10

Bits

Specified Temperature Range

–40

+85

°C

ANALOG INPUT

Differential Full-Scale Input Range

+1.25

+3.25

V

Common-Mode Voltage

2.25

V

Analog Input Bandwidth (–3dB)

Small Signal

+25

°C

400

MHz

Full Power

0dB Input

+25

°C

65

MHz

Input Impedance

1.25 || 4

M

Ω || pF

DIGITAL INPUT

Logic Family

TTL/HCT Compatible CMOS

Convert Command

Start Conversion

Falling Edge

Gain Error

+25

°C

±0.6

±1.5

%

Full

±1.0

±2.5

%

Gain Tempco

±85

ppm/

°C

Power-Supply Rejection of Gain

∆ +V

+25

°C

0.01

0.1

%FSR/%

Input Offset Error

Full

±2.1

±3.0

%

Power-Supply Rejection of Offset

∆ +V

+25

°C

0.02

0.1

%FSR/%

CONVERSION CHARACTERISTICS

Sample Rate

10k

20M

Sample/s

Data Latency

6.5

Convert Cycle

DYNAMIC CHARACTERISTICS

Differential Linearity Error

f = 500kHz

+25

°C

±0.15

±1.0

LSB

Full

±0.15

±1.0

LSB

f = 10MHz

+25

°C

±0.2

±1.0

LSB

Full

±0.2

±1.0

LSB

No Missing Codes

Full

Tested

Integral Linearity Error at f = 500kHz

Full

±0.5

±2.0

LSB

Spurious-Free Dynamic Range (SFDR)

f = 500kHz (–1dBFS input)

+25

°C

67

77

dBFS

Full

64

74

dBFS

f = 10MHz (–1dBFS input)

+25

°C

59

63

dBFS

Full

57

62

dBFS

Case Temperature ......................................................................... +100

°C

Junction Temperature .................................................................... +150

°C

Storage Temperature .................................................................... +125

°C

External Top Reference Voltage (REFT) ................................. +3.4V Max

External Bottom Reference Voltage (REFB) ............................ +1.1V Min

NOTES: (1) Stresses above these ratings may cause permanent damage.

Exposure to absolute maximum conditions for extended periods may degrade

device reliability.

ELECTROSTATIC

DISCHARGE SENSITIVITY

This integrated circuit can be damaged by ESD. Texas Instru-

ments recommends that all integrated circuits be handled with

appropriate precautions. Failure to observe proper handling

and installation procedures can cause damage.

ESD damage can range from subtle performance degradation

to complete device failure. Precision integrated circuits may be

more susceptible to damage because very small parametric

changes could cause the device not to meet its published

specifications.

NOTE: (1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at

www.ti.com.

NOTE: (1) dBFS refers to dB below Full Scale. (2) Percentage accuracies are referred to the internal A/D Converter Full-Scale Range of 4Vp-p. (3) IMD is

referred to the larger of the two input signals. If referred to the peak envelope signal (

≈ 0dB), the intermodulation products will be 7dB lower. (4) Based on

(SINAD – 1.76)/6.02. (5) No “rollover” of bits.