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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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GI810 датащи(PDF) 1 Page - General Semiconductor |
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GI810 датащи(HTML) 1 Page - General Semiconductor |
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1 / 2 page  GI810 THRU GI818 GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Capable of meeting environmental standards of MIL-S-19500 ♦ Fast switching for high efficiency ♦ 1.0 Ampere operation at TA=75°C with no thermal runaway ♦ Typical IR less than 0.1µA ♦ High temperature soldering guaranteed: 350°C/10 seconds 0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension MECHANICAL DATA Case: JEDEC DO-204AC molded plastic over glass body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position:Any Weight: 0.015 ounce, 0.4 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. GI GI GI GI GI GI GI SYMBOLS 810 811 812 814 816 817 818 UNITS Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 Volts Maximum RMS voltage VRMS 35 70 140 280 420 560 700 Volts Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 Volts Maximum average forward rectified current 0.375" (9.5mm) lead length at TA=75°C I(AV) 1.0 Amp Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) at TA=75°C IFSM 30.0 Amps Maximum instantaneous forward voltage at 1.0A VF 1.2 Volts Maximum DC reverse current TA=25°C 10.0 at rated DC blocking voltage TA=100°C IR 100.0 µA Maximum reverse recovery time (NOTE 1) trr 750.0 ns Typical junction capacitance (NOTE 2) CJ 25.0 pF Typical thermal resistance (NOTE 3) R ΘJA 45.0 °C/W Operating junction and storage temperature range TJ, TSTG -65 to +175 °C NOTES: (1) Reverse recovery test conditions: IF=1.0A, VR=30V, di/dt=50A/ µs (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts (3) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, P.C.B. mounted 4/98 0.034 (0.86) 0.028 (0.71) 0.140 (3.6) 0.104 (2.6) DIA. DIA. 1.0 MIN. (25.4) 0.230 (5.8) 0.300 (7.6) 1.0 MIN. (25.4) DO-204AC Dimensions in inches and (millimeters) *Glass-plastic encapsulation technique is covered by Patent No. 3,996,602 and brazed-lead assembly by Patent No. 3,930,306 ® |
Аналогичный номер детали - GI810 |
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Аналогичное описание - GI810 |
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