SMBYW04-200 datasheet(2/6 Pages) STMICROELECTRONICS

номер детали	SMBYW04-200

подробное описание детали	HIGH EFFICIENCY FAST RECOVERY DIODE

PDF	6 Pages

Scroll/Zoom	100%

производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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2 / 6 page

Obsolete

Product(s)

- Obsolete

Product(s)

Symbol

Parameter

Package

Value

Unit

Rth (j-c)

Junction to case

DPAK

°C/W

Rth (j-l)

Junction to leads

SMC

°C/W

THERMAL RESISTANCE

Symbol

Tests Conditions

Min.

Typ.

Max.

Unit

IR *

Reverse leakage current

Tj = 25

°CVR = VRRM

µA

Tj = 100

°C

0.15

0.5

VF **

Forward voltage drop

Tj = 25

°CIF = 12 A

1.25

Tj = 100

°CIF = 4 A

0.8

0.85

STATIC ELECTRICAL CHARACTERISTICS

Pulse test :

* tp = 5 ms,

δ < 2 %

** tp = 380

µs, δ < 2%

To evaluate the maximum conduction losses use the following equation :

P = 0.7 x IF(AV) + 0.037 IF

(RMS)

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

trr

Tj = 25°C

IF = 1A

VF = 30V

dIF/dt = -50 A/

µs26

tfr

Tj = 25°C

IF = 4A

VFR = 1.1 x VF max

dIF/dt = -50 A/

µs20

VFP

Tj = 25°C

IF = 4A

dIF/dt = -50 A/

µs5

RECOVERY CHARACTERISTICS

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

PF(av)(W)

δ = 0.2

δ = 0.5

δ = 1

δ = 0.05

δ = 0.1

IF(av) (A)

δ=tp/T

Fig. 1: Average forward power dissipation versus

average forward current.

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

IM(A)

P=1.0W

P=1.5W

P=2.0W

P=2.5W

δ=tp/T

Fig. 2: Peak current versus form factor.

SMBYW04-200 / BYW4200B

2/6

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