2N7002 datasheet(2/5 Pages) GE

номер детали	2N7002

подробное описание детали	DMOS Transistors (N-Channel)

PDF	5 Pages

Scroll/Zoom	100%

производитель	GE [General Semiconductor]

домашняя страница	http://www.vishay.com

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2 / 5 page

ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

2N7002

Symbol

Min.

Typ.

Max.

Unit

Drain-Source Breakdown Voltage

at ID = 100 µA, VGS = 0

V(BR)DSS

–

Gate Threshold Voltage

at VGS = VDS, ID = 1 mA

VGS(th)

–22.5

Gate-Body Leakage Current

at VGS = 15 V, VDS = 0

IGSS

––10

Drain Cutoff Current at VDS = 25 V, VGS = 0

IDSS

––0.5

µA

Drain-Source ON Resistance

at VGS = 10 V, ID = 500 mA

rDS(ON)

–57.5

Ω

Thermal Resistance Junction to Substrate

Backside

RthSB

–

3201)

K/W

Thermal Resistance Junction to Ambient Air

RthJA

–

4501)

K/W

Forward Transconductance

at VDS = 10 V, ID = 200 mA, f = 1 MHz

–

200

–

Input Capacitance

at VDS = 10 V, VGS = 0, f = 1 MHz

Ciss

–60

–

Switching Times

at VGS = 10 V, VDS = 10 V, RD = 100 Ω

Turn-On Time

Turn-Off Time

ton

toff

–

1) Device on fiberglass substrate, see layout

Layout for RthJA test

Thickness: Fiberglass 0.059 in (1.5 mm)

Copper leads 0.012 in (0.3 mm)

.59 (15)

0.2 (5)

.03 (0.8)

.30 (7.5)

.12 (3)

.04 (1)

.06 (1.5)

.20 (5.1)

.08 (2)

.04 (1)

Dimensions in inches (millimeters)

.47 (12)

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