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FZT489 датащи(PDF) 2 Page - Diodes Incorporated

номер детали FZT489
подробное описание детали  30V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT223
PDF  7 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

FZT489 датащи(HTML) 2 Page - Diodes Incorporated

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FZT489
Document Number DS33134 Rev. 4 - 2
2 of 7
www.diodes.com
October 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
FZT489
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
30
V
Emitter-Base Voltage
VEBO
7
V
Continuous Collector Current
IC
1
A
Base Current
IB
200
mA
Peak Pulse Current
ICM
4
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
(Note 6)
PD
2
W
(Note 7)
3
W
Thermal Resistance, Junction to Ambient
(Note 6)
RθJA
62.5
°C/W
(Note 7)
41.7
°C/W
Thermal Resistance, Junction to Leads (Note 8)
RθJL
19.41
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
ESD Ratings (Note 9)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge - Human Body Model
ESD HBM
≥ 8,000
V
3B
Electrostatic Discharge - Machine Model
ESD MM
≥ 400
V
C
Notes:
6. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; device measured when
operating in steady state condition.
7. Same as note (6), except the device is mounted on 50mm X 50mm single sided 2oz weight copper.
8. Thermal resistance from junction to solder-point (at the end of the collector lead).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.



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