K3306 datasheet(2/8 Pages) NEC

2 / 8 page

Data Sheet D14004EJ2V0DS00

2SK3306

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTICS

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

Drain Leakage Current

IDSS

100

µAVDS = 500 V, VGS = 0 V

Gate to Source Leakage Current

IGSS

±100

VGS =

±30 V, VDS = 0 V

Gate to Source Cut-off Voltage

VGS(off)

2.5

3.5

VDS = 10 V, ID = 1 mA

Forward Transfer Admittance

| yfs |

1.0

3.0

VDS = 10 V, ID = 2.5 A

Drain to Source On-state Resistance

RDS(on)

1.35

1.5

Ω

VGS = 10 V, ID = 2.5 A

Input Capacitance

Ciss

700

VDS = 10 V, VGS = 0 V, f = 1 MHz

Output Capacitance

Coss

115

Reverse Transfer Capacitance

Crss

6pF

Turn-on Delay Time

td(on)

VDD = 150 V, ID = 2.5 A, VGS(on) = 10 V,

Rise Time

3ns

RG = 10

Ω, RL = 60 Ω

Turn-off Delay Time

td(off)

Fall Time

5.5

Total Gate Charge

VDD = 400 V, VGS(on) = 10 V, ID = 5.0 A

Gate to Source Charge

QGS

4nC

Gate to Drain Charge

QGD

4.5

Body Diode Forward Voltage

VF(S-D)

1.0

IF = 5.0 A, VGS = 0 V

Reverse Recovery Time

trr

0.7

µsIF = 5.0 A, VGS = 0 V, di/dt = 50 A/µs

Reverse Recovery Charge

Qrr

3.3

µC

TEST CIRCUIT 1 AVALANCHE CAPABILITY

RG = 25

Ω

VDD

VGS = 20

→ 0 V

BVDSS

IAS

VDS

Starting Tch

VDD

D.U.T.

TEST CIRCUIT 3 GATE CHARGE

TEST CIRCUIT 2 SWITCHING TIME

PG.

VGS

D.U.T.

VDD

τ = 1 s

Duty Cycle

≤ 1 %

VGS

Wave Form

VGS

10 %

90 %

VGS(on)

10 %

90 %

td(on)

tr td(off)

10 %

ton

toff

PG.

Ω

D.U.T.

VDD

IG = 2 mA

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