STB11N65M5 datasheet(4/25 Pages) STMICROELECTRONICS

номер детали	STB11N65M5

подробное описание детали	N-channel 650 V, 0.43 typ., 9 A MDmesh V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages

PDF	25 Pages

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производитель	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5

4/25

Doc ID 022864 Rev 2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

650

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 650 V

VDS = 650 V, TC=125 °C

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 25 V

± 100

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 4.5 A

0.43

0.48

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0

644

2.5

Co(tr)

(1)

Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when

VDS increases from 0 to 80% VDSS

Equivalent

capacitance time

VDS = 0 to 520 V, VGS = 0

-55

Co(er)

(2)

Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss

when VDS increases from 0 to 80% VDSS

Equivalent

capacitance energy

-17

Intrinsic gate

resistance

f = 1 MHz open drain

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 520 V, ID = 4.5 A,

VGS = 10 V

(see Figure 20)

4.6

8.5

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