HPDC

DCz(p)

DCz(n)

AUXC(p)

AUXC(n)

Dx_SEL

HPDA

HPDB

AUX_SEL

OE

GND

AUXA(p)

AUXA(n)

AUXB(p)

AUXB(n)

DDCCLK_A

DDCDAT_A

DDCCLK_B

DDCDAT_B

DAz(p)

DAz(n)

DBz(p)

DBz(n)

SEL

SEL

SEL

SEL2

HD3SS213

SEL=0

SEL=1

SEL=0

SEL=1

4

4

4

4

4

4

(z = 0, 1, 2 or 3)

AUXx(P) or DDCCLK_x

AUXx(n) or DDCDAT_x

DDCCLK_C

DDCDAT_C

HD3SS213

SLAS901A – SEPTEMBER 2013 – REVISED SEPTEMBER 2013

www.ti.com

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Figure 2. HD3SS213ZQE Functional Block Diagram

2

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