Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

TO-254 and TO-254Z

Note 1: maximum current limited by package

configuration

SFF75N08M

SFF75N08Z

55 AMP (note 1) /75 Volts

8.5 mO

N-Channel Trench Gate MOSFET

Features:

•

Trench gate technology for high cell density

•

Lowest ON-resistance in the industry

•

Enhanced operating temperature range

•

Hermetically Sealed, Isolated Package

•

Low Total Gate Charge

•

Fast Switching

•

Enhanced replacement for IRF7MS2907

•

TX, TXV, S-Level screening available

•

Maximum Ratings

Symbol

Value

Units

Drain - Source Voltage

75

V

Gate – Source Voltage

±20

V

Max. Continuous Drain Current (package limited)

55 (note 1)

55 (note 1)

A

Max. Instantaneous Drain Current (Tj limited)

175

75

A

Max. Avalanche current

@ L= 0.1 mH

75

A

Repetitive Avalanche Energy

@ L= 0.1 mH

280

mJ

Total Power Dissipation

210

W

Operating & Storage Temperature

-55 to +175

ºC

Maximum Thermal Resistance

(Junction to Case)

0.7

(typ 0.55)

ºC/W

TO-254 (M)

PIN 1

PIN 3

PIN 2

TO-254Z (Z)

PIN 3

PIN 2

PIN 1

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: FT0021A

DOC