SOLID STATE DEVICES, INC.

SFF120-28Q

PRELIMINARY

14005 Stage Road * Santa Fe Springs, Ca 90670

Phone: (562) 404-4474 * Fax: (562) 404-1773

V

Drain to Source Breakdown Voltage

(VGS =0 V, ID =250

:A)

-

-

RATING

SYMBOL

MIN

TYP

MAX

UNIT

100

S

Drain to Source ON State Resistance

(VGS = 10 V, 60% of Rated ID)

-

0.35

-

V

Gate Threshold Voltage

(VDS =VGS, ID =250

:A)

-

4.0

2.0

S(

Forward Transconductance

(VDS > ID(on) x RDS (on) Max, IDS =60% rated ID)

4.1

-

2.7

:A

Zero Gate Voltage Drain Current

-

-

-

-

Gate to Source Leakage Forward

Gate to Source Leakage Reverse

-

-

+100

-100

-

-

At rated VGS

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

VGS = 10 V

80% rated VDS

60% rated ID

Qg

Qgs

Qgd

-

-

-

10.7

2.9

5.1

16

4.4

7.7

nsec

Turn on Delay Time

Rise Time

Turn off DELAY Time

Fall Time

VDD =50%

rated VDS

50% rated ID

RG = 18

S

tr

tf

-

-

-

-

13

30

19

20

20

45

29

30

V

-

2.5

-

Diode Reverse Recovery Time

Reverse Recovery Charge

140

0.65

260

1.3

55

0.25

IF = rated ID

di/dt = 100A/

:sec

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

VGS =0 Volts

VDS =25 Volts

f =1 MHz

Ciss

Coss

Crss

-

-

-

350

130

36

-

-

-

pF

nsec

:C

For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.

A

ON State Drain Current

(VDS > ID(on) x RDS(on) Max, VGS = 10 V)

-

-

9.2

Diode Forvard Voltage

nC

nA

25

250

NOTES: