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SFT3403 датащи(PDF) 2 Page - Solid States Devices, Inc |
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SFT3403 датащи(HTML) 2 Page - Solid States Devices, Inc |
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2 / 3 page ![]() NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0132A DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT3403 series Electrical Characteristics4/ Symbol Min Typ Max Units Collector – Emitter Blocking Voltage (IC = 50mA) BVCEO 120 250 –– Volts Collector – Base Sustaining Voltage (IC = 200µA) BVCBO 150 400 –– Volts Emitter – Base Sustaining Voltage (IE = 200µA) BVEBO 6 10 –– Volts Collector Cutoff Current (VCE = 80V) (VCE = 80V, TC = 150°C) ICEO1 ICEO2 –– –– 0.05 0.1 1 10 μA mA Collector Cutoff Current (VCB = 80V) (VCB = 80V, TC = 150°C) ICBO1 ICBO2 –– –– 0.005 1 0.5 25 μA Emitter Cutoff Current (VEB = 6V) (VEB = 6V, TC = 150°C) IEBO1 IEBO2 –– –– 0.001 0.2 1.0 1.0 μA mA DC Current Gain * (IC = 2A, VCE = 5V) (IC = 200mA, VCE = 5V) hFE 40 - 100 100 - - Collector-Emitter Saturation Voltage * (IC = 2A, IB = 200mA) (IC = 5A, IB = 500mA) VCE (SAT) –– –– 0.16 0.5 0.75 - Volts Base-Emitter Saturation Voltage * (IC = 2A, IB = 200mA) (IC = 5.0 A, IB = 500mA) VBE (SAT) –– –– 0.95 1.15 - - Volts Current Gain – Bandwidth Product VCE = 5V, IC = 0.5A, f = 10MHz fT 30 80 –– MHz Output Capacitance VCB = 10V, IE = 0, f = 1.0MHz Cob –– 70 120 pF On Time (VCC = 30 V, IC = 5.0 A, VBE (off) = 3.7 V, IB1 = IB2 = 500 mA, RL = 6Ω) t(on) –– 40 - ns Off Time t(off) –– 1100 - ns NOTES: * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2% 1/ For ordering information, price, and availability, contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Up and down bend configurations are available for ‘J’ (TO-257) packages only. 4/ Unless otherwise specified, all electrical characteristics @25ºC. |
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