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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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JAN датащи(PDF) 1 Page - Microsemi Corporation |
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JAN датащи(HTML) 1 Page - Microsemi Corporation |
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1 / 2 page  TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/371 Devices Qualified Level 2N3902 2N5157 JAN JANTX MAXIMUM RATINGS Ratings Symbol 2N3902 2N5157 Unit Collector-Emitter Voltage VCEO 400 500 Vdc Emitter-Base Voltage VEBO 5.0 6.0 Vdc Collector-Base Voltage VCBO 700 Vdc Base Current IB 2.0 Adc Collector Current IC 3.5 Adc Total Power Dissipation @ TA = +25 0C (1) @ TC = +75 0C (2) PT 5.0 100 W W Operating & Storage Temperature Range Tj, Tstg -65 to +200 0C THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit Thermal Resistance, Junction-to-Case RθJC 1.25 0C/W 1) Derate linearly 29 mW/ 0C for TA > +250C 2) Derate linearly 0.8 W/ 0C for TC > +750C TO-3 (TO-204AA)* *See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Cutoff Current VCE = 325 Vdc 2N3902 VCE = 400 Vdc 2N5157 ICEO 250 250 µAdc Collector-Emitter Cutoff Current VBE = 1.5 Vdc; VCE = 700 Vdc ICEX 500 µAdc Emitter-Base Cutoff Current VEB = 5.0 Vdc 2N3902 VEB = 6.0 Vdc 2N5157 IEBO 200 200 µAdc ON CHARACTERISTICS (3) Base-Emitter Saturation Voltage IC = 1.0 Adc; IB = 0.1 Adc IC = 3.5 Adc; IB = 0.7 Adc VBE(sat) 1.5 2.0 Vdc Collector-Emitter Saturation Voltage IC = 1.0 Adc; IB = 0.1 Adc IC = 3.5 Adc; IB = 0.7 Adc VCE(sat) 0.8 2.5 Vdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 |
Аналогичный номер детали - JAN |
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Аналогичное описание - JAN |
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