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STP9NM40N датащи(PDF) 7 Page - STMicroelectronics

номер детали STP9NM40N
подробное описание детали  N-channel 400 V, 0.73 Ω typ., 5.6 A MDmesh™II Power MOSFET in DPAK and TO-220 packages
PDF  18 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STP9NM40N датащи(HTML) 7 Page - STMicroelectronics

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STD9NM40N, STP9NM40N
Electrical characteristics
Doc ID 023762 Rev 2
7/18
Figure 8.
Static drain-source on-resistance
Figure 9.
Gate charge vs gate-source voltage
Figure 10.
Capacitance variations
Figure 11. Output capacitance stored energy
Figure 12. Normalized gate threshold voltage
vs temperature
Figure 13. Normalized on resistance vs
temperature
RDS(on)
0.073
0.072
0.071
0.070
0
2
ID(A)
(
Ω)
1
3
0.074
0.075
0.076
0.077
VGS=10V
4
5
AM00891v1
VGS
6
4
2
0
0
2
Qg(nC)
(V)
8
8
4
6
10
VDD=320V
ID=5.6A
10
12
150
100
50
0
200
250
VDS
VDS (V)
300
12
14
AM16306v1
C
1000
100
10
1
0.1
10
VDS(V)
(pF)
1
100
Ciss
Coss
Crss
AM16308v1
Eoss
0.6
0.4
0.2
0
0
100
VDS(V)
(µJ)
350
0.8
200
300
1.0
1.2
1.4
1.6
250
150
50
AM16309v1
VGS(th)
1.00
0.90
0.80
0.70
-50
0
TJ(°C)
(norm)
-25
75
25
50
100
ID = 250 µA
AM07923v1
RDS(on)
1.7
1.3
0.9
0.5
-50
0
TJ(°C)
(norm)
-25
75
25
50
100
2.1
ID = 2.5 A
AM07924v1



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