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ZLLS410 датащи(PDF) 3 Page - Diodes Incorporated |
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ZLLS410 датащи(HTML) 3 Page - Diodes Incorporated |
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3 / 6 page ![]() ZLLS410 Document number: DS32080 Rev. 3 - 2 3 of 6 www.diodes.com March 2012 © Diodes Incorporated ZLLS410 Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Reverse Breakdown Voltage V(BR)R 10 − − V IR = 200µA Forward Voltage (Note 6) VF − − − 285 350 500 300 380 580 mV mV mV IF = 10mA IF = 100mA IF = 1A Reverse Current IR − − − − 0.5 0.7 1 − 4 5 6 200 μA μA μA μA VR = 5V VR = 8V VR = 10V VR = 8V, TA = 85°C Diode Capacitance CD − 37 − pF f = 1MHz, VR = 10V Reverse Recovery Time Reverse Recovery Charge trr Qrr − − 3 210 − − ns pC Switched from IF = 500mA to VR = 5.5V Measured @ IR = 50mA. di/dt = 500mA/ns, Rsource = 6Ω; Rload = 10Ω Notes: 6. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle < 2% Operational efficiency chart The operational efficiency chart indicates the beneficial use of the ZLLS series diodes in applications requiring higher voltage, higher temperature operation. Circuits requiring low voltage low temperature operation will benefit from using Zetex low VF ZHCS series diodes. |
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