ZXMC3AM832

PROVISIONAL ISSUE E - JULY 2004

5

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS

STATIC

Drain-Source Breakdown Voltage

-30

V

Zero Gate Voltage Drain Current

1

Gate-Body Leakage

100

nA

Gate-Source Threshold Voltage

-0.8

V

I

D

Static Drain-Source On-State Resistance

(1)

0.210

0.330

Ω

Ω

Forward Transconductance

(1)(3)

2.48

S

DYNAMIC

(3)

Input Capacitance

204

pF

f=1MHz

Output Capacitance

39.8

pF

Reverse Transfer Capacitance

25.8

pF

SWITCHING

(2) (3)

Turn-On Delay Time

1.5

ns

Rise Time

2.8

ns

Turn-Off Delay Time

11.3

ns

Fall Time

7.5

ns

Gate Charge

2.58

nC

Total Gate Charge

5.15

nC

Gate-Source Charge

0.65

nC

Gate-Drain Charge

0.92

nC

SOURCE-DRAIN DIODE

Diode Forward Voltage

(1)

-0.85

-0.95

V

Reverse Recovery Time

(3)

18.6

ns

di/dt= 100A/

µs

Reverse Recovery Charge

(3)

14.8

nC

P-CHANNEL

NOTES

(1) Measured under pulsed conditions. Width

≤300µs. Duty cycle ≤ 2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

Not Recommended for New Design

Please Use ZXMC3AMCTA